Showing 2029–2040 of 7598 results
Infineon Technologies IRFS4610TRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
73A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Power Dissipation |
190W |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Turn Off Delay Time |
53 ns |
| Turn On Delay Time |
18 ns |
| Continuous Drain Current (ID) |
73A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
87ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
70 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14mOhm @ 44A, 10V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
3.55nF |
| Drain to Source Resistance |
14mOhm |
| Rds On Max |
14 mΩ |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFS5620PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
144W Tc |
| Turn Off Delay Time |
17.1 ns |
| FET Type |
N-Channel |
| Mount |
Surface Mount |
| Published |
2008 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
144W |
| Turn On Delay Time |
8.6 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs |
77.5mOhm @ 15A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
14.6ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.9 ns |
| Continuous Drain Current (ID) |
24A |
| Threshold Voltage |
3V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 50V |
| Input Capacitance |
1.71nF |
| Drain to Source Resistance |
77.5mOhm |
| Rds On Max |
77.5 mΩ |
| Nominal Vgs |
3 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS59N10DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
52 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 35.4A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFS7430-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
161 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Weight |
1.59999g |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Channels |
1 |
| Factory Lead Time |
14 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
375W Tc |
| Element Configuration |
Single |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.75m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13975pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Rise Time |
79ns |
| Power Dissipation |
375W |
| Turn On Delay Time |
28 ns |
| Fall Time (Typ) |
93 ns |
| Continuous Drain Current (ID) |
240A |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7430PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
160 ns |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
100 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Rise Time |
105ns |
| Drain to Source Voltage (Vdss) |
40V |
| Power Dissipation |
375W |
| Turn On Delay Time |
32 ns |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
3.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7430TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
375W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
160 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
105ns |
| Configuration |
Single |
| Turn On Delay Time |
32 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
3.9V |
| Gate to Source Voltage (Vgs) |
20V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7434-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
245W Tc |
| Turn Off Delay Time |
107 ns |
| Power Dissipation |
245W |
| Mount |
Surface Mount |
| Published |
2005 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
23 ns |
| Continuous Drain Current (ID) |
240A |
| Threshold Voltage |
3V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
315nC @ 10V |
| Rise Time |
125ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
85 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1m Ω @ 100A, 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7434TRL7PP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Power Dissipation |
245W |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Configuration |
Single |
| Power Dissipation-Max |
245W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Series |
HEXFET®, StrongIRFET™ |
| Turn On Delay Time |
23 ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
240A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
315nC @ 10V |
| Rise Time |
125ns |
| Drain to Source Voltage (Vdss) |
40V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1m Ω @ 100A, 10V |
| Fall Time (Typ) |
85 ns |
| Turn-Off Delay Time |
107 ns |
| Continuous Drain Current (ID) |
240A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7437-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
231W Tc |
| Turn Off Delay Time |
78 ns |
| Turn On Delay Time |
18 ns |
| Mount |
Surface Mount |
| Published |
2005 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Power Dissipation |
231W |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Threshold Voltage |
2.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
7437pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
225nC @ 10V |
| Rise Time |
62ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
51 ns |
| Continuous Drain Current (ID) |
195A |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 150μA |
| Recovery Time |
37 ns |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7530PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
172 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
411nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
52 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13703pF @ 25V |
| Rise Time |
141ns |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
104 ns |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
3.7V |
| Gate to Source Voltage (Vgs) |
3.7V |
| Drain-source On Resistance-Max |
0.002Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
760A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Infineon Technologies IRFS7787TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
51 ns |
| Number of Channels |
1 |
| Factory Lead Time |
12 Weeks |
| Published |
2009 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
76A |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
109nC @ 10V |
| Rise Time |
48ns |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0084Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
209 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL3107PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
370W Tc |
| Turn Off Delay Time |
99 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Packaging |
Tube |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±20V |
| Power Dissipation |
370W |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 140A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9370pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
110ns |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
230A |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
900A |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |