Showing 2041–2052 of 7598 results
Infineon Technologies IRFSL3206PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
55 ns |
| Current Rating |
210A |
| Factory Lead Time |
12 Weeks |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
60V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
82ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6540pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
83 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
840A |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4020PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
100W |
| Fall Time (Typ) |
6.3 ns |
| Continuous Drain Current (ID) |
18A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.8 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.105Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
94 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
15.01mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFSL4115PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
41 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
12.1MOhm |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Rise Time |
73ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.1m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5270pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
99A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4127PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
72A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
56 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| Published |
2008 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
22MOhm |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Rise Time |
18ns |
| Fall Time (Typ) |
22 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5380pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
375W |
| Continuous Drain Current (ID) |
72A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Height |
9.652mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4228PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
83A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Turn Off Delay Time |
24 ns |
| Element Configuration |
Single |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
150V |
| Current Rating |
83A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate to Source Voltage (Vgs) |
30V |
| Turn On Delay Time |
18 ns |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
83A |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.53nF |
| Power Dissipation |
330W |
| Drain to Source Resistance |
15mOhm |
| Rds On Max |
15 mΩ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4321PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
85A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
350W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Qualification Status |
Not Qualified |
| Mount |
Through Hole |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
150V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
83A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tube |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
60ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330W |
| Continuous Drain Current (ID) |
83A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
150V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4410ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
97A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
43 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
57 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4820pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Rise Time |
52ns |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
97A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
242 mJ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
230W |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL4615PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
144W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Rds On (Max) @ Id, Vgs |
42mOhm @ 21A, 10V |
| Published |
2008 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
34.5MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
144W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Dual Supply Voltage |
150V |
| Input Capacitance (Ciss) (Max) @ Vds |
1750pF @ 50V |
| Rise Time |
35ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
33A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
1.75nF |
| Drain to Source Resistance |
42mOhm |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Rds On Max |
42 mΩ |
| Nominal Vgs |
3 V |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL5615PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
144W Tc |
| Turn Off Delay Time |
17.2 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
33A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1750pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
23.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13.1 ns |
| Case Connection |
DRAIN |
| Power Dissipation |
144W |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
140A |
| Avalanche Energy Rating (Eas) |
109 mJ |
| Height |
9.652mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
8.9 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL7434PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
115 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.084002g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
294W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
324nC @ 10V |
| Rise Time |
68ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10820pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
68 ns |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
780A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFSL7440PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Turn Off Delay Time |
115 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.5MOhm |
| Terminal Position |
SINGLE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
68 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
135nC @ 10V |
| Rise Time |
68ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
3V |
| Power Dissipation |
208W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
208A |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
772A |
| Nominal Vgs |
3 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
24 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRFSL7540PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
58 ns |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.084002g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
160W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
4555pF @ 25V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 65A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
76ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
56 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
3.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| REACH SVHC |
No SVHC |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |