Showing 2053–2064 of 7598 results
Infineon Technologies IRFSL7787PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
51 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.084002g |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation (Max) |
125W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
109nC @ 10V |
| Rise Time |
48ns |
| Element Configuration |
Single |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4020pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
76A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFTS9342TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
45 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
40MOhm |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
4.6 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
595pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
5.8A |
| Threshold Voltage |
-1.3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Recovery Time |
30 ns |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
2W |
| Lead Free |
Lead Free |
Infineon Technologies IRFU1018EPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation |
110W |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
8.4MOhm |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
4V |
| Turn On Delay Time |
13 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 47A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2290pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Rise Time |
35ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
56A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
79A |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
88 mJ |
| Recovery Time |
39 ns |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFU1205PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
107W Tc |
| Turn Off Delay Time |
47 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
27mOhm |
| Voltage - Rated DC |
55V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
44A |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
44A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
69ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
210 mJ |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
69W |
| Lead Free |
Lead Free |
Infineon Technologies IRFU12N25DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
144W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Mounting Type |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±30V |
Infineon Technologies IRFU2405PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
55 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| Published |
2000 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
55V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
56A |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
78 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
130ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Continuous Drain Current (ID) |
56A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.016Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFU3707PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
4 |
| Supplier Device Package |
IPAK (TO-251) |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
87W Tc |
| Turn Off Delay Time |
11.8 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Published |
2000 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
13Ohm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Current Rating |
61A |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
87W |
| Continuous Drain Current (ID) |
61A |
| Threshold Voltage |
3V |
| Rds On (Max) @ Id, Vgs |
13mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1990pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| Turn On Delay Time |
78 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance |
1.99nF |
| Drain to Source Resistance |
17.5mOhm |
| Rds On Max |
13 mΩ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFU3711ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
93A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
20V |
| Current Rating |
93A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Packaging |
Tube |
| Turn On Delay Time |
12 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0057Ohm |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2160pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 4.5V |
| Rise Time |
13ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.2 ns |
| Continuous Drain Current (ID) |
93A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
20V |
| Avalanche Energy Rating (Eas) |
140 mJ |
| Recovery Time |
28 ns |
| Nominal Vgs |
2 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFU3910PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Lead Length |
9.65mm |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
16A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Lead Pitch |
2.28mm |
| Series |
HEXFET® |
| Element Configuration |
Single |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
115m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
640pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
27ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
16A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
52W |
| Drain Current-Max (Abs) (ID) |
15A |
| Drain-source On Resistance-Max |
0.115Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
150 mJ |
| Nominal Vgs |
4 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFU4104PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
17 ns |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Published |
2010 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Voltage - Rated DC |
40V |
| Current Rating |
119A |
| Lead Pitch |
2.28mm |
| Lead Length |
9.65mm |
| Element Configuration |
Single |
| Power Dissipation |
140W |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Breakdown Voltage |
40V |
| Dual Supply Voltage |
40V |
| Input Capacitance (Ciss) (Max) @ Vds |
2950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Rise Time |
69ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
119A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 42A, 10V |
| FET Type |
N-Channel |
| Recovery Time |
42 ns |
| Nominal Vgs |
4 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRFU4105PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
68W Tc |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
1998 |
| Series |
HEXFET® |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
45Ohm |
| Voltage - Rated DC |
55V |
| Current Rating |
27A |
| Power Dissipation |
48W |
| Turn On Delay Time |
7 ns |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
49ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
27A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 16A, 10V |
| Nominal Vgs |
4 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
| Lead Free |
Lead Free |
Infineon Technologies IRFU4510PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
143W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Delay Time |
42 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
34 ns |
| Continuous Drain Current (ID) |
56A |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13.9m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3031pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
143W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
252A |
| Nominal Vgs |
3 V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |