Showing 2065–2076 of 7598 results
Infineon Technologies IRFU48ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
compliant |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
91W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
NO |
| Mounting Type |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
1720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 37A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| JESD-30 Code |
R-PSIP-T3 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
42A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Pulsed Drain Current-Max (IDM) |
250A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
74 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRFU6215PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
53 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
580MOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
-150V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-13A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2004 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
-13A |
| Threshold Voltage |
-4V |
| Turn On Delay Time |
14 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
295m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
36ns |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Dual Supply Voltage |
-150V |
| Nominal Vgs |
-4 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFU7440PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
51 ns |
| Power Dissipation |
140W |
| Factory Lead Time |
12 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.4MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
DRAIN |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4610pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
134nC @ 10V |
| Rise Time |
39ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
34 ns |
| Continuous Drain Current (ID) |
90A |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
760A |
| Nominal Vgs |
3 V |
| Height |
6.22mm |
| Length |
6.73mm |
| Width |
2.39mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRFU7540PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| Resistance |
4Ohm |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 66A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFU7546PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
99W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
56A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFU7746PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
99W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| Resistance |
11.2Ohm |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11.2m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3107pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
56A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFZ34EPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
68W Tc |
| Turn Off Delay Time |
5.1 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
HEXFET® |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
42mOhm |
| Voltage - Rated DC |
60V |
| Current Rating |
28A |
| Lead Pitch |
2.54mm |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
28A |
| Turn On Delay Time |
5.1 ns |
| Power Dissipation |
68W |
| Drain to Source Breakdown Voltage |
60V |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
4 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRFZ44ESPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
1997 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
48A |
| Drain-source On Resistance-Max |
0.023Ohm |
| Pulsed Drain Current-Max (IDM) |
192A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRFZ44ESTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
60V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 29A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Current Rating |
48A |
| Rise Time |
60ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
48A |
| Drain-source On Resistance-Max |
0.023Ohm |
| Pulsed Drain Current-Max (IDM) |
192A |
| Avalanche Energy Rating (Eas) |
220 mJ |
| RoHS Status |
Non-RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IRFZ44NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2000 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
17.5mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
49A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
3.8W Ta 94W Tc |
| Element Configuration |
Single |
| Number of Terminations |
2 |
| Power Dissipation |
110W |
| Continuous Drain Current (ID) |
49A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1470pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
49A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Rise Time |
60ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Turn-Off Delay Time |
44 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
95 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFZ44VZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
92W Tc |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| JESD-30 Code |
R-PSSO-G2 |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
12mOhm |
| Voltage - Rated DC |
60V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
57A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
15 Weeks |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Power Dissipation |
92W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
62ns |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
57A |
| Qualification Status |
Not Qualified |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
4 V |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRFZ48NLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 130W Tc |
| Turn Off Delay Time |
34 ns |
| Power Dissipation |
140W |
| Mount |
Through Hole |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
55V |
| Current Rating |
64A |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
12 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1970pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
64A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14mOhm @ 32A, 10V |
| Input Capacitance |
1.97nF |
| Drain to Source Resistance |
14mOhm |
| Rds On Max |
14 mΩ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |