Showing 2077–2088 of 7598 results
Infineon Technologies IRFZ48NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
130W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
14MOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
64A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 130W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Reverse Recovery Time |
100 ns |
| Continuous Drain Current (ID) |
64A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1970pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
64A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Rise Time |
78ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
50 ns |
| Turn-Off Delay Time |
34 ns |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
100 ns |
| Nominal Vgs |
4 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRFZ48VS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2001 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
72A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
225 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1985pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 43A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
72A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
290A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
166 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRL100HS121
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
6-VDFN Exposed Pad |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
11.5W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 6.7A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL1404SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.3V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 95A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
160A |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
640A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
520 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL2203NSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
116A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 180W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
3290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.007Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL2910PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
100V |
| Current Rating |
55A |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
48A |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
55A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 5V |
| Rise Time |
100ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
55 ns |
| Turn-Off Delay Time |
49 ns |
| Continuous Drain Current (ID) |
55A |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
26m Ω @ 29A, 10V |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
520 mJ |
| Recovery Time |
350 ns |
| Nominal Vgs |
2 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL2910SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
26m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 5V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±16V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL3102S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 7V |
| Power Dissipation (Max) |
89W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 37A, 7V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRL3102STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 7V |
| Power Dissipation (Max) |
89W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Power Dissipation |
89W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 37A, 7V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 4.5V |
| Rise Time |
130ns |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
110 ns |
| Continuous Drain Current (ID) |
61A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRL3103STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
94W Tc |
| Turn Off Delay Time |
14 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
12 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
12MOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
30V |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Current Rating |
64A |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 4.5V |
| Rise Time |
120ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1650pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
9.1 ns |
| Continuous Drain Current (ID) |
64A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IRL3302SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
39A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 7V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| Current Rating |
39A |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Turn Off Delay Time |
41 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
89 ns |
| Continuous Drain Current (ID) |
39A |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 23A, 7V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 4.5V |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| Power Dissipation |
57W |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
1.3nF |
| Drain to Source Resistance |
23mOhm |
| Rds On Max |
20 mΩ |
| Nominal Vgs |
700 mV |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRL3303STRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
3.8W Ta 68W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
26mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| RoHS Status |
Non-RoHS Compliant |