Showing 2089–2100 of 7598 results
Infineon Technologies IRL3502SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 7V |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
96 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
140W |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
110A |
| Element Configuration |
Single |
| Packaging |
Tube |
| Turn On Delay Time |
10 ns |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 4.5V |
| Rise Time |
140ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
130 ns |
| Continuous Drain Current (ID) |
110A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7mOhm @ 64A, 7V |
| Input Capacitance |
4.7nF |
| Drain to Source Resistance |
7mOhm |
| Rds On Max |
7 mΩ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRL3705NSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
89A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 170W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 46A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
89A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
310A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
340 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL3705NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
89A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 170W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
10mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
89A |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
78 ns |
| Continuous Drain Current (ID) |
89A |
| Power Dissipation |
170W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 5V |
| Rise Time |
140ns |
| Vgs (Max) |
±16V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Recovery Time |
140 ns |
| Nominal Vgs |
2 V |
| Height |
4.699mm |
| Length |
10.668mm |
| Width |
10.16mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL3714STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
47W Tc |
| Min Operating Temperature |
-55°C |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Turn Off Delay Time |
10 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
9.7nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
20V |
| Power Dissipation |
47W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
36A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
670pF |
| Drain to Source Resistance |
20mOhm |
| Rds On Max |
20 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRL3714ZSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
10 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| FET Type |
N-Channel |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
16mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
36A |
| Element Configuration |
Single |
| Power Dissipation |
35W |
| Turn On Delay Time |
6 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Dual Supply Voltage |
20V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
7.2nC @ 4.5V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
36A |
| Threshold Voltage |
2.1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
550pF |
| Recovery Time |
12 ns |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 15A, 10V |
| Drain to Source Resistance |
16mOhm |
| Rds On Max |
16 mΩ |
| Nominal Vgs |
2.1 V |
| Height |
4.699mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRL3715SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
54A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 71W Tc |
| Current Rating |
54A |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
54A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
73ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
71W |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
1.06nF |
| Drain to Source Resistance |
20mOhm |
| Rds On Max |
14 mΩ |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
14mOhm @ 26A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRL3715ZLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
11 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation |
45W |
| Mount |
Through Hole |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
50A |
| Element Configuration |
Single |
| Packaging |
Tube |
| Turn On Delay Time |
7.1 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
| Rise Time |
44ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
50A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11mOhm @ 15A, 10V |
| Input Capacitance |
870pF |
| Drain to Source Resistance |
11mOhm |
| Rds On Max |
11 mΩ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRL3716S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
210W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5090pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
79nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRL3803STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
200W |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
6mOhm |
| Voltage - Rated DC |
30V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
140A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
140A |
| Turn On Delay Time |
14 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 71A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
140A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Rise Time |
230ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
29 ns |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Case Connection |
DRAIN |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
470A |
| Dual Supply Voltage |
30V |
| Recovery Time |
180 ns |
| Nominal Vgs |
1 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL3803STRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 200W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
16 Weeks |
| Published |
2002 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 71A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
140A |
| Drain-source On Resistance-Max |
0.006Ohm |
| Pulsed Drain Current-Max (IDM) |
470A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
610 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRL3803VPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
29 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Current Rating |
140A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
75A |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 71A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
76nC @ 4.5V |
| Rise Time |
180ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
140A |
| Threshold Voltage |
1V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Turn On Delay Time |
16 ns |
| Drain-source On Resistance-Max |
0.0055Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
470A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
16.51mm |
| Length |
10.6426mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
Infineon Technologies IRL40SC228
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
557A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
416W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.65m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
19680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
307nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |