Showing 2101–2112 of 7598 results
Infineon Technologies IRL520NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 48W Tc |
| Turn Off Delay Time |
23 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
180MOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
10A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2004 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
2V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 5V |
| Rise Time |
35ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.8W |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
85 mJ |
| Recovery Time |
160 ns |
| Nominal Vgs |
2 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL530NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| Resistance |
100mOhm |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Voltage - Rated DC |
100V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
17A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
79W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
17A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Rise Time |
53ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
26 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
17A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Turn On Delay Time |
7.2 ns |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
100V |
| Recovery Time |
210 ns |
| Nominal Vgs |
2 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL530NSTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
3.8W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
17A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
3.8W Ta 79W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
2V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
17A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Rise Time |
53ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
26 ns |
| Turn-Off Delay Time |
30 ns |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
100V |
| Recovery Time |
210 ns |
| Nominal Vgs |
2 V |
| Height |
4.826mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRL60S216
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
HEXFET®, StrongIRFET™ |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.95m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
15330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
255nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
195A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRL7472L1TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric L8 |
| Number of Pins |
2 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
375A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 341W Tc |
| Turn Off Delay Time |
174 ns |
| JESD-30 Code |
R-XBCC-N9 |
| Factory Lead Time |
12 Weeks |
| Published |
2009 |
| Series |
StrongIRFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
9 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
68A |
| Threshold Voltage |
1V |
| Power Dissipation |
3.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
68 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
0.59m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
20082pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
330nC @ 4.5V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.00045Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
765 mJ |
| Max Junction Temperature (Tj) |
175°C |
| Height |
740μm |
| Length |
9.15mm |
| Width |
7.1mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRL8113STRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
105A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Operating Mode |
ENHANCEMENT MODE |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
105A |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2840pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 4.5V |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
42A |
| Power Dissipation |
110W |
| Drain-source On Resistance-Max |
0.006Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
420A |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Height |
4.699mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Turn On Delay Time |
14 ns |
| Lead Free |
Lead Free |
Infineon Technologies IRLB3036PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.4MOhm |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
195A |
| Threshold Voltage |
2.5V |
| Turn On Delay Time |
66 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 165A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11210pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Rise Time |
220ns |
| Vgs (Max) |
±16V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
270A |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Height |
9.02mm |
| Length |
10.5156mm |
| Width |
4.699mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLB3813PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
33 ns |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
1.95MOhm |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
36 ns |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain to Source Breakdown Voltage |
30V |
| Rds On (Max) @ Id, Vgs |
1.95m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8420pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 4.5V |
| Rise Time |
170ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
260A |
| Threshold Voltage |
1.9V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Pulsed Drain Current-Max (IDM) |
1050A |
| Dual Supply Voltage |
30V |
| Avalanche Energy Rating (Eas) |
520 mJ |
| Recovery Time |
36 ns |
| Nominal Vgs |
1.9 V |
| Height |
9.02mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLB8314PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 68A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5050pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
130A |
| Threshold Voltage |
1.7V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLH5034TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
29A Ta 100A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
31 ns |
| Packaging |
Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs |
2.4mOhm @ 50A, 10V |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Power Dissipation |
156W |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
4.73nF |
| Input Capacitance (Ciss) (Max) @ Vds |
4730pF @ 25V |
| Rise Time |
54ns |
| Drain to Source Voltage (Vdss) |
40V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
40V |
| Recovery Time |
38 ns |
| Drain to Source Resistance |
2.7mOhm |
| Vgs(th) (Max) @ Id |
2.5V @ 150μA |
| Rds On Max |
2.4 mΩ |
| Nominal Vgs |
1 V |
| Height |
810μm |
| Length |
5mm |
| Width |
5.1562mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLH5036TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
20A Ta 100A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
28 ns |
| Packaging |
Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs |
4.4mOhm @ 50A, 10V |
| Published |
2012 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Power Dissipation |
160W |
| Turn On Delay Time |
23 ns |
| FET Type |
N-Channel |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance |
5.36nF |
| Input Capacitance (Ciss) (Max) @ Vds |
5360pF @ 25V |
| Rise Time |
48ns |
| Drain to Source Voltage (Vdss) |
60V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
60V |
| Recovery Time |
42 ns |
| Drain to Source Resistance |
4.4mOhm |
| Vgs(th) (Max) @ Id |
2.5V @ 150μA |
| Rds On Max |
4.4 mΩ |
| Nominal Vgs |
1 V |
| Height |
810μm |
| Length |
5mm |
| Width |
5.0038mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLH6224TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| FET Type |
N-Channel |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta 105A Tc |
| Turn Off Delay Time |
67 ns |
| Packaging |
Cut Tape (CT) |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Published |
2013 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
3MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Power Dissipation |
3.6W |
| Turn On Delay Time |
9.4 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
3.71nF |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
23ns |
| Drain to Source Voltage (Vdss) |
20V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
28A |
| Threshold Voltage |
800mV |
| Gate to Source Voltage (Vgs) |
12V |
| Vgs(th) (Max) @ Id |
1.1V @ 50μA |
| Rds On (Max) @ Id, Vgs |
3mOhm @ 20A, 4.5V |
| Recovery Time |
57 ns |
| Drain to Source Resistance |
3mOhm |
| Rds On Max |
3 mΩ |
| Nominal Vgs |
800 mV |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
3710pF @ 10V |
| Lead Free |
Lead Free |