Showing 2113–2124 of 7598 results
Infineon Technologies IRLH7134TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-PQFN (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
26A Ta 85A Tc |
| Turn Off Delay Time |
18 ns |
| Packaging |
Cut Tape (CT) |
| Power Dissipation |
3.6W |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
3.3MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.6W |
| Element Configuration |
Single |
| Published |
2012 |
| Turn On Delay Time |
21 ns |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Vgs(th) (Max) @ Id |
2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 4.5V |
| Rise Time |
75ns |
| Drain to Source Voltage (Vdss) |
40V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
26A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3mOhm @ 50A, 10V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
3.72nF |
| Drain to Source Resistance |
3.3mOhm |
| Rds On Max |
3.3 mΩ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLHM630TR2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-VQFN Exposed Pad |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 40A Tc |
| Number of Elements |
1 |
| Turn Off Delay Time |
65 ns |
| Power Dissipation |
37W |
| Mount |
Surface Mount |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
2.7W |
| Packaging |
Cut Tape (CT) |
| Turn On Delay Time |
9.1 ns |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
1.1V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3170pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 4.5V |
| Rise Time |
32ns |
| Fall Time (Typ) |
43 ns |
| Continuous Drain Current (ID) |
21A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 20A, 4.5V |
| Recovery Time |
30 ns |
| Nominal Vgs |
800 mV |
| Height |
990.6μm |
| Length |
3.2766mm |
| Width |
3.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLI2203N
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Packaging |
Tube |
| Published |
1997 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Package / Case |
TO-220-3 Full Pack |
| Mounting Type |
Through Hole |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3500pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 37A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
61A |
| Drain-source On Resistance-Max |
0.007Ohm |
| DS Breakdown Voltage-Min |
30V |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRLI2203NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB Full-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Current Rating |
61A |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
7MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Turn Off Delay Time |
29 ns |
| Power Dissipation |
47W |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Rds On (Max) @ Id, Vgs |
7mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 4.5V |
| Rise Time |
210ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Continuous Drain Current (ID) |
61A |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Input Capacitance |
3.5nF |
| Isolation Voltage |
2kV |
| Drain to Source Resistance |
7mOhm |
| Rds On Max |
7 mΩ |
| Nominal Vgs |
1 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLI3803PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
48W |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB Full-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Turn Off Delay Time |
29 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
6MOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
30V |
| Current Rating |
67A |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Breakdown Voltage |
30V |
| Input Capacitance |
5nF |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Rise Time |
230ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
76A |
| Gate to Source Voltage (Vgs) |
16V |
| FET Type |
N-Channel |
| Turn On Delay Time |
14 ns |
| Drain to Source Resistance |
9mOhm |
| Rds On Max |
6 mΩ |
| Nominal Vgs |
1 V |
| Height |
16.12mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 40A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRLI530NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
41W Tc |
| Turn Off Delay Time |
30 ns |
| Power Dissipation |
33W |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Series |
HEXFET® |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Voltage - Rated DC |
100V |
| Current Rating |
11A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
ISOLATED |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
100V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Rise Time |
53ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
100V |
| Recovery Time |
210 ns |
| Isolation Voltage |
2kV |
| Nominal Vgs |
2 V |
| Height |
16.12mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRLIZ34NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
37W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
46mOhm |
| Voltage - Rated DC |
55V |
| Current Rating |
20A |
| Element Configuration |
Single |
| Turn Off Delay Time |
29 ns |
| Power Dissipation |
31W |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
880pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 5V |
| Rise Time |
10ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
22A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
8.9 ns |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Isolation Voltage |
2kV |
| Nominal Vgs |
2 V |
| Height |
9.8mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRLIZ44NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
HEXFET® |
| Packaging |
Tube |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Voltage - Rated DC |
55V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
30A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 5V |
| Rise Time |
84ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
2V |
| Case Connection |
ISOLATED |
| Power Dissipation |
38W |
| Drain Current-Max (Abs) (ID) |
28A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
120 ns |
| Isolation Voltage |
2kV |
| Nominal Vgs |
2 V |
| Height |
9.8mm |
| Length |
10.6172mm |
| Width |
4.826mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
11 ns |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRLL014NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1999 |
| Package / Case |
TO-261-4, TO-261AA |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
230pF @ 25V |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
140m Ω @ 2A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
2.8A |
| Drain-source On Resistance-Max |
0.14Ohm |
| Pulsed Drain Current-Max (IDM) |
16A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
32 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLL2705TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Ta |
| Number of Elements |
1 |
| Packaging |
Cut Tape (CT) |
| Published |
1999 |
| Terminal Form |
GULL WING |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Package / Case |
TO-261-4, TO-261AA |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
55V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain-source On Resistance-Max |
0.051Ohm |
| Pulsed Drain Current-Max (IDM) |
30A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
110 mJ |
| JESD-30 Code |
R-PDSO-G4 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRLL2705TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3.8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
6.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
12ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
35 ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
88 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLML0030TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.3W Ta |
| Turn Off Delay Time |
7.4 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1998 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
27MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
5.3A |
| Threshold Voltage |
1.7V |
| Power Dissipation |
1.3W |
| Turn On Delay Time |
5.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
382pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
2.6nC @ 4.5V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.4 ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Recovery Time |
17 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.7 V |
| Height |
1.12mm |
| Length |
3.0226mm |
| Width |
1.397mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |