Showing 2137–2148 of 7598 results
Infineon Technologies IRLR3110ZTRRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
33 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
48 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3980pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 4.5V |
| Rise Time |
110ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
42A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Height |
2.26mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| Power Dissipation |
140W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLR3410TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1998 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Drain to Source Voltage (Vdss) |
100V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±16V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.125Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
150 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLR3410TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Published |
2003 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
105mOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
17A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Rise Time |
53ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
2V |
| Power Dissipation |
79W |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Dual Supply Voltage |
100V |
| Recovery Time |
210 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
2 V |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRLR3705ZTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
8MOhm |
| Additional Feature |
HIGH RELIABILITY |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
42A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
130W Tc |
| Element Configuration |
Single |
| Number of Terminations |
2 |
| Power Dissipation |
130W |
| Continuous Drain Current (ID) |
89A |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 42A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
42A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 5V |
| Rise Time |
150ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
70 ns |
| Turn-Off Delay Time |
33 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
42 ns |
| Nominal Vgs |
3 V |
| Height |
2.2606mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRLR3714PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
4 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Turn Off Delay Time |
10 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
20mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
36A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
9.7nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
36A |
| FET Type |
N-Channel |
| Power Dissipation |
47W |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Input Capacitance |
670pF |
| Drain to Source Resistance |
28mOhm |
| Rds On Max |
20 mΩ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 18A, 10V |
| Lead Free |
Lead Free |
Infineon Technologies IRLR3714ZTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
37A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
35W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
9.2 ns |
| Power Dissipation |
35W |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.3 ns |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
7.1nC @ 4.5V |
| Rise Time |
7.6ns |
| Drain to Source Voltage (Vdss) |
20V |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
37A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
560pF |
| Drain to Source Resistance |
15mOhm |
| Rds On Max |
15 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLR3715
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2001 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
54A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 71W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
20V |
| Avalanche Energy Rating (Eas) |
19 mJ |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRLR3717TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
89W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2830pF @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
460A |
| DS Breakdown Voltage-Min |
20V |
| Avalanche Energy Rating (Eas) |
460 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLR3915TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
120W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
14mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
61A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Published |
2003 |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-252AA |
| Turn On Delay Time |
7.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
51ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
30A |
| Power Dissipation |
120W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Nominal Vgs |
3 V |
| Height |
2.26mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLR7807ZTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
43A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
9.8 ns |
| Operating Temperature |
-55°C~175°C TJ |
| FET Type |
N-Channel |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
40W |
| Turn On Delay Time |
7.1 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Breakdown Voltage |
30V |
| Vgs(th) (Max) @ Id |
2.25V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
| Rise Time |
28ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
43A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
780pF |
| Drain to Source Resistance |
13.8mOhm |
| Rds On (Max) @ Id, Vgs |
13.8mOhm @ 15A, 10V |
| Rds On Max |
13.8 mΩ |
| Nominal Vgs |
1.8 V |
| Height |
2.38mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
780pF @ 15V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLR7821TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Part Status |
Not For New Designs |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 4.5V |
| Power Dissipation-Max |
75W Tc |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1030pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
65A Tc |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-251AA |
| Drain Current-Max (Abs) (ID) |
65A |
| Drain-source On Resistance-Max |
0.01Ohm |
| Pulsed Drain Current-Max (IDM) |
260A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
230 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |