Showing 2149–2160 of 7598 results
Infineon Technologies IRLR7833TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
4010pF @ 15V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Pulsed Drain Current-Max (IDM) |
560A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
530 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRLR8259PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
48W Tc |
| Turn Off Delay Time |
9.1 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
8.7MOhm |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Series |
HEXFET® |
| Power Dissipation |
48W |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.7m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.9 ns |
| Continuous Drain Current (ID) |
57A |
| Threshold Voltage |
1.9V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.4 ns |
| Drain Current-Max (Abs) (ID) |
42A |
| Drain to Source Breakdown Voltage |
25V |
| Dual Supply Voltage |
25V |
| Avalanche Energy Rating (Eas) |
67 mJ |
| Recovery Time |
26 ns |
| Nominal Vgs |
1.9 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLR8729PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
58A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
55W Tc |
| Turn Off Delay Time |
11 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Power Dissipation |
55W |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
8.9MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
10 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.9m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
| Rise Time |
47ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
58A |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain to Source Breakdown Voltage |
30V |
| Case Connection |
DRAIN |
| Pulsed Drain Current-Max (IDM) |
260A |
| Avalanche Energy Rating (Eas) |
74 mJ |
| Recovery Time |
24 ns |
| Nominal Vgs |
1.8 V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRLR9343TRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Power Dissipation |
79W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
93MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
79W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Fall Time (Typ) |
9.5 ns |
| Turn-Off Delay Time |
21 ns |
| Transistor Application |
AMPLIFIER |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
660pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
20A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
24ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
9.5 ns |
| FET Type |
P-Channel |
| Continuous Drain Current (ID) |
-20A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLS3036-7PPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Turn Off Delay Time |
89 ns |
| Power Dissipation |
380W |
| Mount |
Surface Mount |
| Published |
2008 |
| Series |
HEXFET® |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
1.9MOhm |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
81 ns |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
16V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11270pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 4.5V |
| Rise Time |
540ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
170 ns |
| Continuous Drain Current (ID) |
300A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 180A, 10V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLS3036TRL7PP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Elements |
1 |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
1.9MOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G6 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 4.5V |
| Rise Time |
540ns |
| Power Dissipation |
380W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 180A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11270pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
240A Tc |
| Element Configuration |
Single |
| Power Dissipation-Max |
380W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
170 ns |
| Continuous Drain Current (ID) |
240A |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
1000A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IRLS3813TRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
195W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
83nC @ 4.5V |
| Rise Time |
202ns |
| Power Dissipation |
195W |
| Turn On Delay Time |
32 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.95m Ω @ 148A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8020pF @ 25V |
| Number of Channels |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
102 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Infineon Technologies IRLSL3034PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
TO-262 |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Power Dissipation |
375W |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2009 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Turn Off Delay Time |
97 ns |
| Turn On Delay Time |
65 ns |
| Continuous Drain Current (ID) |
195A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10315pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
162nC @ 4.5V |
| Rise Time |
827ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
355 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.7mOhm @ 195A, 10V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
10.315nF |
| Drain to Source Resistance |
1.7mOhm |
| Rds On Max |
1.7 mΩ |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLSL3036PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Turn Off Delay Time |
110 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.4MOhm |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Through Hole |
| Factory Lead Time |
15 Weeks |
| Fall Time (Typ) |
110 ns |
| Continuous Drain Current (ID) |
195A |
| Turn On Delay Time |
66 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 165A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11210pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Rise Time |
220ns |
| Vgs (Max) |
±16V |
| Power Dissipation |
380W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
270A |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| Height |
9.652mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Infineon Technologies IRLU014NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
6.5 ns |
| Number of Pins |
3 |
| Supplier Device Package |
I-PAK |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28W Tc |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
140mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
55V |
| Current Rating |
10A |
| Element Configuration |
Single |
| Power Dissipation |
28W |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Input Capacitance (Ciss) (Max) @ Vds |
265pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7.9nC @ 5V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Rds On (Max) @ Id, Vgs |
140mOhm @ 6A, 10V |
| FET Type |
N-Channel |
| Input Capacitance |
265pF |
| Drain to Source Resistance |
210mOhm |
| Rds On Max |
140 mΩ |
| Nominal Vgs |
1 V |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Lead Free |
Lead Free |
Infineon Technologies IRLU3114ZPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Supplier Device Package |
I-PAK |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
33 ns |
| FET Type |
N-Channel |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
140W |
| Turn On Delay Time |
25 ns |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate to Source Voltage (Vgs) |
16V |
| Vgs(th) (Max) @ Id |
2.5V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 4.5V |
| Rise Time |
140ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
130A |
| Threshold Voltage |
2.5V |
| Drain to Source Breakdown Voltage |
40V |
| Input Capacitance |
3.81nF |
| Rds On (Max) @ Id, Vgs |
4.9mOhm @ 42A, 10V |
| Drain to Source Resistance |
6.5mOhm |
| Rds On Max |
4.9 mΩ |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Capacitance (Ciss) (Max) @ Vds |
3810pF @ 25V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRLU3714PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Supplier Device Package |
I-PAK |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Turn Off Delay Time |
10 ns |
| Packaging |
Tube |
| Published |
2005 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
20mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
20V |
| Current Rating |
36A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
9.7nC @ 4.5V |
| Rise Time |
78ns |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
36A |
| FET Type |
N-Channel |
| Power Dissipation |
47W |
| Drain to Source Breakdown Voltage |
20V |
| Dual Supply Voltage |
20V |
| Input Capacitance |
670pF |
| Drain to Source Resistance |
28mOhm |
| Rds On Max |
20 mΩ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 18A, 10V |
| Lead Free |
Lead Free |