Showing 2161–2172 of 7598 results
Infineon Technologies IRLU7843PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
161A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
34 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
161A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
161A |
| Threshold Voltage |
2.3V |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 4.5V |
| Rise Time |
42ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
620A |
| Avalanche Energy Rating (Eas) |
1440 mJ |
| Height |
6.22mm |
| Length |
6.7056mm |
| Width |
2.3876mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLZ34NPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Power Dissipation |
56W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
35mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
30A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
68W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
30A |
| Turn On Delay Time |
8.9 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
880pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
30A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 5V |
| Rise Time |
100ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
29 ns |
| Turn-Off Delay Time |
21 ns |
| Threshold Voltage |
2V |
| JEDEC-95 Code |
TO-220AB |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
110 ns |
| Nominal Vgs |
2 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Infineon Technologies IRLZ34NSPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.8W Ta 68W Tc |
| Turn Off Delay Time |
21 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
60mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
30A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Series |
HEXFET® |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
29 ns |
| Reverse Recovery Time |
76 ns |
| Power Dissipation |
68W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
880pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 5V |
| Rise Time |
100ns |
| Vgs (Max) |
±16V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Nominal Vgs |
2 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRLZ44NSTRR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
HEXFET® |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation (Max) |
3.8W Ta 110W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
22mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±16V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies SI3443DVTR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Ta |
| Packaging |
Cut Tape (CT) |
| Published |
2003 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1079pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies SI4435DY
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Packaging |
Tube |
| Published |
1999 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| HTS Code |
8541.29.00.95 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2320pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| JESD-30 Code |
R-PDSO-G8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
MS-012AA |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.02Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
Non-RoHS Compliant |