Showing 2173–2184 of 7598 results
Infineon Technologies SN7002NH6433XTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
5.3 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Factory Lead Time |
10 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
SIPMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
360mW Ta |
| Terminal Position |
DUAL |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Rise Time |
3.2ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
2.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds |
45pF @ 25V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.6 ns |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain-source On Resistance-Max |
5Ohm |
| DS Breakdown Voltage-Min |
60V |
| Feedback Cap-Max (Crss) |
4.2 pF |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SN7002W E6327
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SIPMOS® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
unknown |
| Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 230mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds |
45pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
0.23A |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPA07N60C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
32W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
790pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 4.6A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
7.3A |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
21.9A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
230 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPA17N80C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2320pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 11A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
177nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.29Ohm |
| Pulsed Drain Current-Max (IDM) |
51A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
670 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPB08P06P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SIPMOS® |
| JESD-609 Code |
e0 |
| Published |
2006 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
AVALANCHE RATED |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
-60V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
420pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 6.2A, 10V |
| Peak Reflow Temperature (Cel) |
220 |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8.8A |
| Drain-source On Resistance-Max |
0.3Ohm |
| Pulsed Drain Current-Max (IDM) |
35.32A |
| Avalanche Energy Rating (Eas) |
70 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
-8.8A |
| Lead Free |
Contains Lead |
Infineon Technologies SPB100N08S2-07
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
SINGLE |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
75V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 66A, 10V |
| Reach Compliance Code |
unknown |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6020pF @ 25V |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Drain-source On Resistance-Max |
0.0068Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
100A |
| Lead Free |
Contains Lead |
Infineon Technologies SPB18P06P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
81.1W Ta |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
AVALANCHE RATED |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
-60V |
| Published |
2006 |
| Terminal Form |
GULL WING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 13.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Peak Reflow Temperature (Cel) |
220 |
| Current Rating |
-18.6A |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
18.7A |
| Drain-source On Resistance-Max |
0.13Ohm |
| Pulsed Drain Current-Max (IDM) |
74.8A |
| Avalanche Energy Rating (Eas) |
151 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPB20N60S5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Reach Compliance Code |
not_compliant |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 13A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPB21N50C3ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Published |
2005 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 13.1A, 10V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Drain to Source Voltage (Vdss) |
560V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
21A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
63A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPB70N10L
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Terminal Position |
SINGLE |
| Published |
2005 |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
2V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4540pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
| Current Rating |
70A |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
70A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.025Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80N03S203GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.1m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
RoHS Compliant |