Showing 2185–2196 of 7598 results
Infineon Technologies SPB80N03S2L-04
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| JESD-609 Code |
e0 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Voltage - Rated DC |
30V |
| Terminal Position |
SINGLE |
| Published |
2003 |
| Peak Reflow Temperature (Cel) |
260 |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 130μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Current Rating |
80A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.0062Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
380 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80N03S2L-06
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
30V |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 80A, 10V |
| Current Rating |
80A |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 25V |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.0092Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
240 mJ |
| Pin Count |
4 |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies SPB80N04S2-H4
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e0 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
40V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 80A, 10V |
| Current Rating |
80A |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5890pF @ 25V |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
148nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
660 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80N06S2-08
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
215W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e0 |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Reach Compliance Code |
unknown |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.008Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
450 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
80A |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80N06S2L-07
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
210W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e0 |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Voltage - Rated DC |
55V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 150μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Current Rating |
80A |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
4210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.01Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
450 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80N08S2L-07
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
75V |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 67A, 10V |
| Current Rating |
80A |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6820pF @ 25V |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
233nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.0087Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Pin Count |
4 |
| Lead Free |
Contains Lead |
Infineon Technologies SPB80P06PGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1999 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Elements |
1 |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
-60V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
-80A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Rise Time |
18ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
340W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
24 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 64A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 5.5mA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5033pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
173nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Turn-Off Delay Time |
56 ns |
| Continuous Drain Current (ID) |
-80A |
| Threshold Voltage |
-3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-60V |
| Drain to Source Breakdown Voltage |
-60V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
4.4mm |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation-Max |
340W Tc |
| Lead Free |
Contains Lead |
Infineon Technologies SPD01N60C3BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
800mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
11W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Series |
CoolMOS™ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
| Rise Time |
25ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
11W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Halogen Free |
Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
800mA |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain Current-Max (Abs) (ID) |
0.8A |
| Drain-source On Resistance-Max |
6Ohm |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPD02N50C3BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
52 Weeks |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
150°C |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
1.8A |
| Drain-source On Resistance-Max |
3Ohm |
| Pulsed Drain Current-Max (IDM) |
5.4A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPD04N60S5
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
60 ns |
| Current Rating |
4.5A |
| Contact Plating |
Tin |
| Published |
2005 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
22.9nC @ 10V |
| Rise Time |
30ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
55 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 2.8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
580pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
4.5A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
9A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPD06N60C3ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
6.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
74W Tc |
| Voltage - Rated DC |
650V |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
CoolMOS™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Turn Off Delay Time |
52 ns |
| Current Rating |
6.2A |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 260μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
600V |
| Power Dissipation |
74W |
| Turn On Delay Time |
7 ns |
| Continuous Drain Current (ID) |
6.2A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Input Capacitance |
620pF |
| Drain to Source Resistance |
680mOhm |
| Rds On Max |
750 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPD06N80C3BTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Series |
CoolMOS™ |
| Pin Count |
3 |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
83W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
785pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
6A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
800V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Avalanche Energy Rating (Eas) |
230 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |