Showing 2197–2208 of 7598 results
Transistors - FETs/MOSFETs - Single
Infineon Technologies SPD07N60C3ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Voltage - Rated DC |
650V |
Mount |
Surface Mount |
Package / Case |
TO-252 |
Number of Pins |
3 |
Turn Off Delay Time |
60 ns |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Factory Lead Time |
10 Weeks |
Power Dissipation |
83W |
Current Rating |
7.3A |
Turn On Delay Time |
6 ns |
Halogen Free |
Halogen Free |
Rise Time |
3.5ns |
Drain to Source Voltage (Vdss) |
600V |
Fall Time (Typ) |
7 ns |
Continuous Drain Current (ID) |
7.3A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain to Source Resistance |
540mOhm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies SPD07N60S5T
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
PG-TO252-3 |
Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
83W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
Series |
CoolMOS™ |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Rated DC |
650V |
Current Rating |
7.3A |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id |
5.5V @ 350μA |
Input Capacitance (Ciss) (Max) @ Vds |
970pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Rise Time |
40ns |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
7.3A |
Input Capacitance |
970pF |
Rds On Max |
600 mΩ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies SPD09P06PLGBTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9.7A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
42W Tc |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
18 Weeks |
Published |
2008 |
Series |
SIPMOS® |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~175°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
42W |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
250m Ω @ 6.8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Halogen Free |
Not Halogen Free |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
9.7A |
JEDEC-95 Code |
TO-252AB |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.25Ohm |
Avalanche Energy Rating (Eas) |
70 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies SPD100N03S2L04T
In stock
Manufacturer |
Infineon Technologies |
---|---|
Voltage - Rated DC |
30V |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-5 |
Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
150W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Series |
OptiMOS™ |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
FET Type |
N-Channel |
Current Rating |
100A |
Rds On (Max) @ Id, Vgs |
4.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
2V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
3320pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
89.7nC @ 10V |
Rise Time |
17ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100A |
Input Capacitance |
3.32nF |
Rds On Max |
4.2 mΩ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies SPD14N06S2-80
In stock
Manufacturer |
Infineon Technologies |
---|---|
Terminal Form |
GULL WING |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
30W Tc |
Turn Off Delay Time |
22 ns |
Operating Temperature |
-55°C~175°C TJ |
Published |
2003 |
Series |
OptiMOS™ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
AVALANCHE RATED |
Voltage - Rated DC |
55V |
Terminal Position |
SINGLE |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
7 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
80m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 14μA |
Current Rating |
17A |
Reach Compliance Code |
unknown |
Rise Time |
28ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Continuous Drain Current (ID) |
17A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
14A |
Drain-source On Resistance-Max |
0.08Ohm |
Pulsed Drain Current-Max (IDM) |
68A |
RoHS Status |
Non-RoHS Compliant |
Pin Count |
4 |
Lead Free |
Contains Lead |
Infineon Technologies SPD15P10PGBTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
128W Tc |
Turn Off Delay Time |
33 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
18 Weeks |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
4 |
Series |
Automotive, AEC-Q101, SIPMOS® |
Qualification Status |
Not Qualified |
Fall Time (Typ) |
16 ns |
Continuous Drain Current (ID) |
15A |
Power Dissipation |
128W |
Case Connection |
DRAIN |
Turn On Delay Time |
9.5 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
240m Ω @ 10.6A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 1.54mA |
Halogen Free |
Not Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1280pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
23ns |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
-100V |
Drain-source On Resistance-Max |
0.24Ohm |
Drain to Source Breakdown Voltage |
-100V |
Pulsed Drain Current-Max (IDM) |
60A |
Nominal Vgs |
-3 V |
Height |
2.41mm |
Length |
6.73mm |
Width |
6.22mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies SPD22N08S2L-50
In stock
Manufacturer |
Infineon Technologies |
---|---|
Series |
OptiMOS™ |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
75W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Voltage - Rated DC |
75V |
Terminal Position |
SINGLE |
Published |
2003 |
Reach Compliance Code |
unknown |
Vgs(th) (Max) @ Id |
2V @ 31μA |
Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 25V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
50m Ω @ 11A, 10V |
Current Rating |
25A |
Pin Count |
4 |
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
25A |
Drain Current-Max (Abs) (ID) |
18A |
Drain-source On Resistance-Max |
0.065Ohm |
Pulsed Drain Current-Max (IDM) |
100A |
Avalanche Energy Rating (Eas) |
94 mJ |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
Infineon Technologies SPD30N03S2L07GBTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Turn Off Delay Time |
62 ns |
Terminal Form |
GULL WING |
Operating Temperature |
-55°C~175°C TJ |
Published |
2003 |
Series |
OptiMOS™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
SINGLE |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Rise Time |
17ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
DRAIN |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6.7m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id |
2V @ 85μA |
Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
JESD-30 Code |
R-PSSO-G2 |
Fall Time (Typ) |
47 ns |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0098Ohm |
Pulsed Drain Current-Max (IDM) |
120A |
Avalanche Energy Rating (Eas) |
250 mJ |
Radiation Hardening |
No |
Operating Mode |
ENHANCEMENT MODE |
RoHS Status |
RoHS Compliant |
Infineon Technologies SPD30N03S2L07T
In stock
Manufacturer |
Infineon Technologies |
---|---|
Voltage - Rated DC |
30V |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-3 |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
136W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Series |
OptiMOS™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
FET Type |
N-Channel |
Current Rating |
30A |
Rds On (Max) @ Id, Vgs |
6.7mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id |
2V @ 85μA |
Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
Rise Time |
17ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
30A |
Input Capacitance |
2.53nF |
Rds On Max |
6.7 mΩ |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies SPD30N03S2L10GBTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2002 |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
100W Tc |
Turn Off Delay Time |
27 ns |
Operating Temperature |
-55°C~175°C TJ |
Terminal Position |
SINGLE |
Mount |
Surface Mount |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Packaging |
Tape & Reel (TR) |
Terminal Form |
GULL WING |
Vgs(th) (Max) @ Id |
2V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
1550pF @ 25V |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
100W |
Case Connection |
DRAIN |
Turn On Delay Time |
6.1 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
10m Ω @ 30A, 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
41.8nC @ 10V |
Rise Time |
13ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
17 ns |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
DS Breakdown Voltage-Min |
30V |
RoHS Status |
RoHS Compliant |
Infineon Technologies SPD50N03S2L06GBTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Configuration |
SINGLE WITH BUILT-IN DIODE |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Turn Off Delay Time |
35 ns |
Operating Temperature |
-55°C~175°C TJ |
Published |
2011 |
Series |
OptiMOS™ |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
AVALANCHE RATED |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Vgs (Max) |
±20V |
Fall Time (Typ) |
24 ns |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6.4m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
2V @ 85μA |
Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
Rise Time |
19ns |
Drain to Source Voltage (Vdss) |
30V |
Power Dissipation |
136W |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
50A |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0092Ohm |
Pulsed Drain Current-Max (IDM) |
200A |
DS Breakdown Voltage-Min |
30V |
Avalanche Energy Rating (Eas) |
250 mJ |
Radiation Hardening |
No |
Case Connection |
DRAIN |
RoHS Status |
RoHS Compliant |
Infineon Technologies SPD50N06S2L-13
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2003 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
136W Tc |
Operating Temperature |
-55°C~175°C TJ |
Terminal Form |
GULL WING |
Mount |
Surface Mount |
Series |
OptiMOS™ |
JESD-609 Code |
e0 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN LEAD |
Voltage - Rated DC |
55V |
Terminal Position |
SINGLE |
Packaging |
Tape & Reel (TR) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12.7m Ω @ 34A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Reach Compliance Code |
unknown |
Current Rating |
50A |
Vgs(th) (Max) @ Id |
2V @ 80μA |
Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
50A |
Drain-source On Resistance-Max |
0.0167Ohm |
Pulsed Drain Current-Max (IDM) |
200A |
Avalanche Energy Rating (Eas) |
240 mJ |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |