Transistors - FETs/MOSFETs - Single

Infineon Technologies SPD07N60C3ATMA1

In stock

SKU: SPD07N60C3ATMA1-11
Manufacturer

Infineon Technologies

Voltage - Rated DC

650V

Mount

Surface Mount

Package / Case

TO-252

Number of Pins

3

Turn Off Delay Time

60 ns

Packaging

Tape & Reel (TR)

Published

2003

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Factory Lead Time

10 Weeks

Power Dissipation

83W

Current Rating

7.3A

Turn On Delay Time

6 ns

Halogen Free

Halogen Free

Rise Time

3.5ns

Drain to Source Voltage (Vdss)

600V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

7.3A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

600V

Drain to Source Resistance

540mOhm

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies SPD07N60S5T

In stock

SKU: SPD07N60S5T-11
Manufacturer

Infineon Technologies

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

PG-TO252-3

Current - Continuous Drain (Id) @ 25℃

7.3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

83W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2005

Series

CoolMOS™

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Voltage - Rated DC

650V

Current Rating

7.3A

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 350μA

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Rise Time

40ns

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±20V

Continuous Drain Current (ID)

7.3A

Input Capacitance

970pF

Rds On Max

600 mΩ

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies SPD09P06PLGBTMA1

In stock

SKU: SPD09P06PLGBTMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9.7A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

42W Tc

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

18 Weeks

Published

2008

Series

SIPMOS®

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

42W

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

250m Ω @ 6.8A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Halogen Free

Not Halogen Free

Pin Count

4

JESD-30 Code

R-PSSO-G2

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

9.7A

JEDEC-95 Code

TO-252AB

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

-60V

Drain-source On Resistance-Max

0.25Ohm

Avalanche Energy Rating (Eas)

70 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies SPD100N03S2L04T

In stock

SKU: SPD100N03S2L04T-11
Manufacturer

Infineon Technologies

Voltage - Rated DC

30V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-5

Current - Continuous Drain (Id) @ 25℃

100A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

150W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2003

Series

OptiMOS™

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

FET Type

N-Channel

Current Rating

100A

Rds On (Max) @ Id, Vgs

4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds

3320pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

89.7nC @ 10V

Rise Time

17ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

Input Capacitance

3.32nF

Rds On Max

4.2 mΩ

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies SPD14N06S2-80

In stock

SKU: SPD14N06S2-80-11
Manufacturer

Infineon Technologies

Terminal Form

GULL WING

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

17A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

30W Tc

Turn Off Delay Time

22 ns

Operating Temperature

-55°C~175°C TJ

Published

2003

Series

OptiMOS™

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

55V

Terminal Position

SINGLE

Mounting Type

Surface Mount

Mount

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

7 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

80m Ω @ 7A, 10V

Vgs(th) (Max) @ Id

4V @ 14μA

Current Rating

17A

Reach Compliance Code

unknown

Rise Time

28ns

Vgs (Max)

±20V

Fall Time (Typ)

27 ns

Continuous Drain Current (ID)

17A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

14A

Drain-source On Resistance-Max

0.08Ohm

Pulsed Drain Current-Max (IDM)

68A

RoHS Status

Non-RoHS Compliant

Pin Count

4

Lead Free

Contains Lead

Infineon Technologies SPD15P10PGBTMA1

In stock

SKU: SPD15P10PGBTMA1-11
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

15A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

128W Tc

Turn Off Delay Time

33 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2007

JESD-30 Code

R-PSSO-G2

Factory Lead Time

18 Weeks

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

AVALANCHE RATED

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

4

Series

Automotive, AEC-Q101, SIPMOS®

Qualification Status

Not Qualified

Fall Time (Typ)

16 ns

Continuous Drain Current (ID)

15A

Power Dissipation

128W

Case Connection

DRAIN

Turn On Delay Time

9.5 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

240m Ω @ 10.6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1.54mA

Halogen Free

Not Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Rise Time

23ns

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

-100V

Drain-source On Resistance-Max

0.24Ohm

Drain to Source Breakdown Voltage

-100V

Pulsed Drain Current-Max (IDM)

60A

Nominal Vgs

-3 V

Height

2.41mm

Length

6.73mm

Width

6.22mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies SPD22N08S2L-50

In stock

SKU: SPD22N08S2L-50-11
Manufacturer

Infineon Technologies

Series

OptiMOS™

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

75W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Mount

Surface Mount

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Voltage - Rated DC

75V

Terminal Position

SINGLE

Published

2003

Reach Compliance Code

unknown

Vgs(th) (Max) @ Id

2V @ 31μA

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 25V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 11A, 10V

Current Rating

25A

Pin Count

4

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

25A

Drain Current-Max (Abs) (ID)

18A

Drain-source On Resistance-Max

0.065Ohm

Pulsed Drain Current-Max (IDM)

100A

Avalanche Energy Rating (Eas)

94 mJ

RoHS Status

Non-RoHS Compliant

Lead Free

Contains Lead

Infineon Technologies SPD30N03S2L07GBTMA1

In stock

SKU: SPD30N03S2L07GBTMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

136W Tc

Turn Off Delay Time

62 ns

Terminal Form

GULL WING

Operating Temperature

-55°C~175°C TJ

Published

2003

Series

OptiMOS™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED

Terminal Position

SINGLE

Mounting Type

Surface Mount

Mount

Surface Mount

Rise Time

17ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Turn On Delay Time

8 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

6.7m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 85μA

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

JESD-30 Code

R-PSSO-G2

Fall Time (Typ)

47 ns

Continuous Drain Current (ID)

30A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0098Ohm

Pulsed Drain Current-Max (IDM)

120A

Avalanche Energy Rating (Eas)

250 mJ

Radiation Hardening

No

Operating Mode

ENHANCEMENT MODE

RoHS Status

RoHS Compliant

Infineon Technologies SPD30N03S2L07T

In stock

SKU: SPD30N03S2L07T-11
Manufacturer

Infineon Technologies

Voltage - Rated DC

30V

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

136W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2003

Series

OptiMOS™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

FET Type

N-Channel

Current Rating

30A

Rds On (Max) @ Id, Vgs

6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 85μA

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Rise Time

17ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

30A

Input Capacitance

2.53nF

Rds On Max

6.7 mΩ

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies SPD30N03S2L10GBTMA1

In stock

SKU: SPD30N03S2L10GBTMA1-11
Manufacturer

Infineon Technologies

Published

2002

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

30A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

100W Tc

Turn Off Delay Time

27 ns

Operating Temperature

-55°C~175°C TJ

Terminal Position

SINGLE

Mount

Surface Mount

Series

OptiMOS™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

AVALANCHE RATED

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Vgs(th) (Max) @ Id

2V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

100W

Case Connection

DRAIN

Turn On Delay Time

6.1 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

10m Ω @ 30A, 10V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

41.8nC @ 10V

Rise Time

13ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

17 ns

Continuous Drain Current (ID)

30A

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

30V

RoHS Status

RoHS Compliant

Infineon Technologies SPD50N03S2L06GBTMA1

In stock

SKU: SPD50N03S2L06GBTMA1-11
Manufacturer

Infineon Technologies

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

136W Tc

Turn Off Delay Time

35 ns

Operating Temperature

-55°C~175°C TJ

Published

2011

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED

Terminal Position

SINGLE

Terminal Form

GULL WING

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs (Max)

±20V

Fall Time (Typ)

24 ns

Turn On Delay Time

8 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

6.4m Ω @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 85μA

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Rise Time

19ns

Drain to Source Voltage (Vdss)

30V

Power Dissipation

136W

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current (ID)

50A

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0092Ohm

Pulsed Drain Current-Max (IDM)

200A

DS Breakdown Voltage-Min

30V

Avalanche Energy Rating (Eas)

250 mJ

Radiation Hardening

No

Case Connection

DRAIN

RoHS Status

RoHS Compliant

Infineon Technologies SPD50N06S2L-13

In stock

SKU: SPD50N06S2L-13-11
Manufacturer

Infineon Technologies

Published

2003

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

136W Tc

Operating Temperature

-55°C~175°C TJ

Terminal Form

GULL WING

Mount

Surface Mount

Series

OptiMOS™

JESD-609 Code

e0

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

TIN LEAD

Voltage - Rated DC

55V

Terminal Position

SINGLE

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12.7m Ω @ 34A, 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Reach Compliance Code

unknown

Current Rating

50A

Vgs(th) (Max) @ Id

2V @ 80μA

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

50A

Drain-source On Resistance-Max

0.0167Ohm

Pulsed Drain Current-Max (IDM)

200A

Avalanche Energy Rating (Eas)

240 mJ

RoHS Status

Non-RoHS Compliant

Lead Free

Contains Lead