Showing 2209–2220 of 7598 results
Infineon Technologies SPI100N03S2-03
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
30V |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
OptiMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7020pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 80A, 10V |
| Reach Compliance Code |
unknown |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
| Current Rating |
100A |
| Lead Free |
Lead Free |
Infineon Technologies SPI10N10
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
50W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Published |
2001 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 21μA |
| Input Capacitance (Ciss) (Max) @ Vds |
426pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 7.8A, 10V |
| Current Rating |
10.3A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
19.4nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
10.3A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.17Ohm |
| Pulsed Drain Current-Max (IDM) |
41.2A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPI11N65C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO262-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
125W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
44 ns |
| Packaging |
Tube |
| Published |
2005 |
| Series |
CoolMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
11A |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
3.9V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
650V |
| Turn On Delay Time |
10 ns |
| Input Capacitance |
1.2nF |
| Drain to Source Resistance |
380mOhm |
| Rds On Max |
380 mΩ |
| Height |
9.45mm |
| Length |
10.36mm |
| Width |
4.52mm |
| Rds On (Max) @ Id, Vgs |
380mOhm @ 7A, 10V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPI15N65C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO262-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
156W Tc |
| Turn Off Delay Time |
70 ns |
| FET Type |
N-Channel |
| Factory Lead Time |
8 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
156W |
| Turn On Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Rds On (Max) @ Id, Vgs |
280mOhm @ 9.4A, 10V |
| Max Dual Supply Voltage |
650V |
| Drain to Source Breakdown Voltage |
650V |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Rise Time |
14ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3.9V @ 675μA |
| Halogen Free |
Halogen Free |
| Input Capacitance |
1.6nF |
| Drain to Source Resistance |
280mOhm |
| Rds On Max |
280 mΩ |
| Nominal Vgs |
3 V |
| Height |
9.45mm |
| Length |
10.2mm |
| Width |
4.5mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPI21N10
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Current Rating |
21A |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
38.4nC @ 10V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
80m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 44μA |
| Input Capacitance (Ciss) (Max) @ Vds |
865pF @ 25V |
| Rise Time |
56ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.08Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Lead Free |
Infineon Technologies SPI70N10L
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
SIPMOS® |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Published |
2005 |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
2V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4540pF @ 25V |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
| Current Rating |
70A |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
70A |
| Drain-source On Resistance-Max |
0.025Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPI80N04S2-04
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
40V |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Series |
OptiMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6980pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 80A, 10V |
| Reach Compliance Code |
unknown |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.0037Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
80A |
| Lead Free |
Contains Lead |
Infineon Technologies SPI80N06S2L-05
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
unknown |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
55V |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 80A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
7530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Current Rating |
80A |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.006Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
800 mJ |
| RoHS Status |
Non-RoHS Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Contains Lead |
Infineon Technologies SPN03N60C3
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
700mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Turn Off Delay Time |
64 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| Series |
CoolMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
650V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 135μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current Rating |
700mA |
| Rise Time |
3ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
700mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.7A |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
3A |
| Nominal Vgs |
3 V |
| RoHS Status |
Non-RoHS Compliant |
| Pin Count |
4 |
| Lead Free |
Contains Lead |
Infineon Technologies SPP02N80C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Factory Lead Time |
6 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
2.7 Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 120μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
2A |
| Pulsed Drain Current-Max (IDM) |
6A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
90 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPP06N80C3XK
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
83W Tc |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Mounting Type |
Through Hole |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
CoolMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
785pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
800V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPP07N60S5
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Turn Off Delay Time |
170 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
8 Weeks |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
650V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
7.3A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Packaging |
Tube |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
7.3A |
| Threshold Voltage |
4.5V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
120 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 350μA |
| Halogen Free |
Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
970pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
83W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
14.6A |
| Height |
9.45mm |
| Length |
10.36mm |
| Width |
4.57mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |