Showing 2221–2232 of 7598 results
Infineon Technologies SPP07N60S5XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
2 Weeks |
| Mount |
Through Hole |
| Package / Case |
TO-220 |
| Number of Elements |
1 |
| Turn Off Delay Time |
170 ns |
| Packaging |
Rail/Tube |
| Published |
2005 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Power Dissipation |
82W |
| Turn On Delay Time |
120 ns |
| Rise Time |
40ns |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
7.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Drain to Source Resistance |
600mOhm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPP100N04S2L-03
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Voltage - Rated DC |
40V |
| Mount |
Through Hole |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
unknown |
| Current Rating |
100A |
| Input Capacitance (Ciss) (Max) @ Vds |
8000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Drain-source On Resistance-Max |
0.0044Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPP100N06S2L-05
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Voltage - Rated DC |
55V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 80A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
7530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Terminal Position |
SINGLE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0059Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
100A |
| Lead Free |
Contains Lead |
Infineon Technologies SPP100N08S2-07
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Voltage - Rated DC |
75V |
| Packaging |
Tube |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.1m Ω @ 66A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Terminal Position |
SINGLE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
100A |
| Lead Free |
Contains Lead |
Infineon Technologies SPP10N10L
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
100V |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Packaging |
Tube |
| Published |
2002 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
2V @ 21μA |
| Input Capacitance (Ciss) (Max) @ Vds |
444pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
154m Ω @ 8.1A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
10.3A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.21Ohm |
| Pulsed Drain Current-Max (IDM) |
42.2A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
RoHS Compliant |
| Current Rating |
10.3A |
| Lead Free |
Lead Free |
Infineon Technologies SPP16N50C3HKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
50 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2004 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
8ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 675μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
560V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
16A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
48A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
460 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPP18P06PHXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
81.1W Ta |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
25 ns |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
81.1W |
| Turn On Delay Time |
12 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 13.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
5.8ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
18.7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
74.8A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPP20N65C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Turn Off Delay Time |
67 ns |
| Voltage - Rated DC |
650V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2005 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Current Rating |
20.7A |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 13.1A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
| Rise Time |
5ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
20.7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies SPP21N50C3HKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Turn Off Delay Time |
67 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Qualification Status |
Not Qualified |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 13.1A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
560V |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
21A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
63A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPP21N50C3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
21A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
67 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
208W Tc |
| Packaging |
Tube |
| Published |
2005 |
| Series |
CoolMOS™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
560V |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
500V |
| Power Dissipation |
208W |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain to Source Breakdown Voltage |
560V |
| Input Capacitance |
2.4nF |
| Drain to Source Resistance |
190mOhm |
| Rds On Max |
190 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
10 ns |
| Lead Free |
Lead Free |
Infineon Technologies SPP35N10
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2002 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
39 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
1570pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
44m Ω @ 26.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 83μA |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
63ns |
| Current Rating |
35A |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
35A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.044Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
245 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPP77N06S2-12
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
158W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Voltage - Rated DC |
55V |
| Mount |
Through Hole |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
2350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 93μA |
| Reach Compliance Code |
unknown |
| Current Rating |
80A |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
77A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
280 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |