Showing 2233–2244 of 7598 results
Infineon Technologies SPP80N03S2-03
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Operating Temperature |
-55°C~175°C TJ |
| Voltage - Rated DC |
30V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 80A, 10V |
| Current Rating |
80A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPP80N03S2L04AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Elements |
1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO220-3-1 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
52 Weeks |
| Power Dissipation (Max) |
188W Tc |
| Turn Off Delay Time |
54 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
OptiMOS™ |
| Part Status |
Discontinued |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Max Operating Temperature |
175°C |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
30V |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.2mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
188W |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
3.9nF |
| Rds On Max |
4.2 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPP80N03S2L05AKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
167W Tc |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 110μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
167W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 55A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3320pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
89.7nC @ 10V |
| Terminal Position |
SINGLE |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPP80N06S2-05
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| Series |
OptiMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6790pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 80A, 10V |
| Reach Compliance Code |
unknown |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0051Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Current Rating |
80A |
| Lead Free |
Contains Lead |
Infineon Technologies SPP80N06S2L-05
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Finish |
MATTE TIN |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2000 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Voltage - Rated DC |
55V |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Current Rating |
80A |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Position |
SINGLE |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
7530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.006Ohm |
| Avalanche Energy Rating (Eas) |
800 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies SPP80N06S2L-06
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
MATTE TIN |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
250W Tc |
| Published |
2003 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 69A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 180μA |
| Current Rating |
80A |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Position |
SINGLE |
| Voltage - Rated DC |
55V |
| Input Capacitance (Ciss) (Max) @ Vds |
5050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0084Ohm |
| RoHS Status |
Non-RoHS Compliant |
| Reach Compliance Code |
unknown |
| Lead Free |
Contains Lead |
Infineon Technologies SPS01N60C3
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
800mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
11W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
800mA |
| JEDEC-95 Code |
TO-251AA |
| Power Dissipation |
11W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
0.8A |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
1.6A |
| Dual Supply Voltage |
650V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Nominal Vgs |
3 V |
| REACH SVHC |
Unknown |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPU02N60C3BKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2005 |
| Series |
CoolMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs(th) (Max) @ Id |
3.9V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1.1A, 10V |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
12.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
1.8A |
| Drain-source On Resistance-Max |
3Ohm |
| Pulsed Drain Current-Max (IDM) |
5.4A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPU02N60S5BKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5.5V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
240pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1.1A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
9.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
1.8A |
| Drain-source On Resistance-Max |
3Ohm |
| Pulsed Drain Current-Max (IDM) |
3.2A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
50 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies SPU03N60C3BKMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2003 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
38W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 2A, 10V |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
3.9V @ 135μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
3.2A |
| Pulsed Drain Current-Max (IDM) |
9.6A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
100 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPU18P06P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
18.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
24.5 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Current Rating |
-18.6A |
| Mount |
Through Hole |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
-60V |
| Max Power Dissipation |
80W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Part Status |
Obsolete |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
5.8ns |
| Drain to Source Voltage (Vdss) |
60V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 13.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
18.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.13Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
74.4A |
| Avalanche Energy Rating (Eas) |
150 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies SPW20N60S5FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| Series |
CoolMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 13A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |