Showing 2245–2256 of 7598 results
Infineon Technologies SPW32N50C3FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
284W Tc |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Factory Lead Time |
8 Weeks |
| Published |
2005 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 1.8mA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
560V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-247AA |
| Drain Current-Max (Abs) (ID) |
32A |
| Drain-source On Resistance-Max |
0.11Ohm |
| Pulsed Drain Current-Max (IDM) |
96A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
1100 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies SPW52N50C3FKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
417W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Packaging |
Tube |
| Terminal Position |
SINGLE |
| Vgs(th) (Max) @ Id |
3.9V @ 2.7mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 30A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Gate Charge (Qg) (Max) @ Vgs |
290nC @ 10V |
| Drain to Source Voltage (Vdss) |
560V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
52A |
| Drain-source On Resistance-Max |
0.07Ohm |
| Pulsed Drain Current-Max (IDM) |
156A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
1800 mJ |
| RoHS Status |
RoHS Compliant |
International Rectifier AUIRF1010EZSTRL
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
140W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 51A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2810 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
86 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRF1010Z
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
140W (Tc) |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2840 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
95 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
55 V |
International Rectifier AUIRF1404S
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
3.8W (Ta), 200W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4mOhm @ 95A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
7360 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
200 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRF1405
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
330W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.3mOhm @ 101A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
5480 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
260 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
55 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRF4104STRR
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Drain to Source Voltage (Vdss) |
40 V |
| Number of Pins |
3 |
| Turn-On Delay Time |
16 ns |
| Max Operating Temperature |
175 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
140 W |
| Element Configuration |
Single |
| Power Dissipation |
140 W |
| Rise Time |
130 ns |
| Mount |
Surface Mount |
| Continuous Drain Current (ID) |
120 A |
| Turn-Off Delay Time |
38 ns |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain to Source Breakdown Voltage |
40 V |
| Input Capacitance |
3 nF |
| Drain to Source Resistance |
5.5 mΩ |
| Rds On Max |
5.5 mΩ |
| Height |
4.826 mm |
| Length |
10.668 mm |
| Width |
9.652 mm |
| Radiation Hardening |
No |
International Rectifier AUIRF4905STRL
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
200W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
Automotive, AEC-Q101, HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
3500 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
180 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
55 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRF7734M2TR
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
DirectFET™ Isometric M2 |
| Supplier Device Package |
DirectFET™ Isometric M2 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
2.5W (Ta), 46W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.9mOhm @ 43A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2545 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
17A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
72 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRF7736M2TR
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
DirectFET™ Isometric M4 |
| Supplier Device Package |
DirectFET™ Isometric M4 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
2.5W (Ta), 63W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3mOhm @ 65A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150µA |
| Input Capacitance (Ciss) (Max) @ Vds |
4267 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
22A (Ta), 108A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
108 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRFB3207
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
300W (Tc) |
| Product Status |
Obsolete |
| Mounting Type |
Through Hole |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
7600 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
260 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
75 V |
| Vgs (Max) |
±20V |
International Rectifier AUIRFL024NTR
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
TO-261-4, TO-261AA |
| Supplier Device Package |
SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
1W (Ta) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
75mOhm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
400 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
2.8A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
18.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
55 V |
| Vgs (Max) |
±20V |