Transistors - FETs/MOSFETs - Single

International Rectifier IRF60B217

In stock

SKU: IRF60B217-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3-1

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

83W (Tc)

Product Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

9mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

3.7V @ 50µA

Input Capacitance (Ciss) (Max) @ Vds

2230 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Gate Charge (Qg) (Max) @ Vgs

66 nC @ 10 V

Drain to Source Voltage (Vdss)

60 V

Vgs (Max)

±20V

International Rectifier IRF6201PBF

In stock

SKU: IRF6201PBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package

8-SO

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.5W (Ta)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.45mOhm @ 27A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 100µA

Input Capacitance (Ciss) (Max) @ Vds

8555 pF @ 16 V

Current - Continuous Drain (Id) @ 25°C

27A (Ta)

Gate Charge (Qg) (Max) @ Vgs

195 nC @ 4.5 V

Drain to Source Voltage (Vdss)

20 V

Vgs (Max)

±12V

International Rectifier IRF640NSTRRPBF

In stock

SKU: IRF640NSTRRPBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 175°C (TJ)

Supplier Device Package

D2PAK

Base Product Number

IRF640

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

150W (Tc)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1160 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Gate Charge (Qg) (Max) @ Vgs

67 nC @ 10 V

Drain to Source Voltage (Vdss)

200 V

Vgs (Max)

±20V

International Rectifier IRF6810STRPBF

In stock

SKU: IRF6810STRPBF-11
Manufacturer

International Rectifier

Operating Temperature

-40°C ~ 150°C (TJ)

Package / Case

DirectFET™ Isometric S1

Supplier Device Package

DIRECTFET S1

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.1W (Ta), 20W (Tc)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5.2mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.1V @ 25µA

Input Capacitance (Ciss) (Max) @ Vds

1038 pF @ 13 V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 50A (Tc)

Gate Charge (Qg) (Max) @ Vgs

11 nC @ 4.5 V

Drain to Source Voltage (Vdss)

25 V

Vgs (Max)

±16V

International Rectifier IRF6898MTRPBF

In stock

SKU: IRF6898MTRPBF-11
Manufacturer

International Rectifier

Series

HEXFET®

Package / Case

DirectFET™ Isometric MX

Supplier Device Package

DirectFET™ Isometric MX

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.8W (Ta), 78W (Tc)

Product Status

Active

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

1.1mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.1V @ 100µA

Input Capacitance (Ciss) (Max) @ Vds

5630 pF @ 13 V

Current - Continuous Drain (Id) @ 25°C

40A (Ta), 214A (Tc)

Gate Charge (Qg) (Max) @ Vgs

68 nC @ 4.5 V

Drain to Source Voltage (Vdss)

25 V

Vgs (Max)

±16V

FET Feature

Schottky Diode (Body)

International Rectifier IRF710S

In stock

SKU: IRF710S-11
Manufacturer

International Rectifier

Voltage Rating (DC)

400 V

Packaging

Bulk

Current Rating

2 A

Rise Time

9.9 ns

Drain to Source Voltage (Vdss)

400 V

Continuous Drain Current (ID)

2 A

Lead Free

Contains Lead

International Rectifier IRF7207TR

In stock

SKU: IRF7207TR-11
Manufacturer

International Rectifier

Mount

Surface Mount

Voltage Rating (DC)

-20 V

Packaging

Tape & Reel (TR)

Max Power Dissipation

2.5 W

Current Rating

-5.4 A

Rise Time

24 ns

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

5.4 A

Input Capacitance

780 pF

Rds On Max

60 mΩ

Lead Free

Contains Lead

International Rectifier IRF7241PBF

In stock

SKU: IRF7241PBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package

8-SO

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.5W (Ta)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

41mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

3220 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Gate Charge (Qg) (Max) @ Vgs

80 nC @ 10 V

Drain to Source Voltage (Vdss)

40 V

Vgs (Max)

±20V

International Rectifier IRF7468PBF

In stock

SKU: IRF7468PBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package

8-SO

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.5W (Ta)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

15.5mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

2460 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta)

Gate Charge (Qg) (Max) @ Vgs

34 nC @ 4.5 V

Drain to Source Voltage (Vdss)

40 V

Vgs (Max)

±12V

International Rectifier IRF7607TRPBF

In stock

SKU: IRF7607TRPBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

Micro8™

Base Product Number

IRF7607

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

1.8W (Ta)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

30mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

1310 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta)

Gate Charge (Qg) (Max) @ Vgs

22 nC @ 5 V

Drain to Source Voltage (Vdss)

20 V

Vgs (Max)

±12V

International Rectifier IRF8113PBF

In stock

SKU: IRF8113PBF-11
Manufacturer

International Rectifier

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package

8-SO

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

International Rectifier

Package

Bulk

Power Dissipation (Max)

2.5W (Ta)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

HEXFET®

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5.6mOhm @ 17.2A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

2910 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C

17.2A (Ta)

Gate Charge (Qg) (Max) @ Vgs

36 nC @ 4.5 V

Drain to Source Voltage (Vdss)

30 V

Vgs (Max)

±20V

International Rectifier IRF8327STRPBF

In stock

SKU: IRF8327STRPBF-11
Manufacturer

International Rectifier

Power Dissipation

42 W

Package / Case

DirectFET™ Isometric SQ

Number of Pins

8

Supplier Device Package

DIRECTFET™ SQ

Package Quantity

4800

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

International Rectifier

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Product Status

Active

Package

Bulk

Turn-On Delay Time

7.8 ns

Operating Temperature

-40°C ~ 150°C (TJ)

Packaging

Tape & Reel

Max Operating Temperature

150 °C

Min Operating Temperature

-40 °C

Max Power Dissipation

2.2 W

Technology

MOSFET (Metal Oxide)

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

60 A

Gate to Source Voltage (Vgs)

20 V

Input Capacitance (Ciss) (Max) @ Vds

1430 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 60A (Tc)

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 4.5 V

Rise Time

8.9 ns

Drain to Source Voltage (Vdss)

30 V

Vgs (Max)

±20V

Turn-Off Delay Time

9.3 ns

Rds On (Max) @ Id, Vgs

7.3mOhm @ 14A, 10V

FET Type

N-Channel

Drain to Source Breakdown Voltage

30 V

Input Capacitance

1.43 nF

Max Junction Temperature (Tj)

150 °C

Drain to Source Resistance

10.9 mΩ

Rds On Max

7.3 mΩ

On-State Resistance

7.3 mΩ

Radiation Hardening

No

Vgs(th) (Max) @ Id

2.4V @ 25µA

Lead Free

Lead Free