Showing 2293–2304 of 7598 results
Transistors - FETs/MOSFETs - Single
International Rectifier IRF60B217
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Package / Case |
TO-220-3 |
Supplier Device Package |
PG-TO220-3-1 |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
83W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
9mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id |
3.7V @ 50µA |
Input Capacitance (Ciss) (Max) @ Vds |
2230 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
66 nC @ 10 V |
Drain to Source Voltage (Vdss) |
60 V |
Vgs (Max) |
±20V |
International Rectifier IRF6201PBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SO |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.5W (Ta) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
2.45mOhm @ 27A, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds |
8555 pF @ 16 V |
Current - Continuous Drain (Id) @ 25°C |
27A (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
195 nC @ 4.5 V |
Drain to Source Voltage (Vdss) |
20 V |
Vgs (Max) |
±12V |
International Rectifier IRF640NSTRRPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Supplier Device Package |
D2PAK |
Base Product Number |
IRF640 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
150W (Tc) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
150mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1160 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
18A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
67 nC @ 10 V |
Drain to Source Voltage (Vdss) |
200 V |
Vgs (Max) |
±20V |
International Rectifier IRF6810STRPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-40°C ~ 150°C (TJ) |
Package / Case |
DirectFET™ Isometric S1 |
Supplier Device Package |
DIRECTFET S1 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.1W (Ta), 20W (Tc) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5.2mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 25µA |
Input Capacitance (Ciss) (Max) @ Vds |
1038 pF @ 13 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Ta), 50A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
11 nC @ 4.5 V |
Drain to Source Voltage (Vdss) |
25 V |
Vgs (Max) |
±16V |
International Rectifier IRF6898MTRPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Series |
HEXFET® |
Package / Case |
DirectFET™ Isometric MX |
Supplier Device Package |
DirectFET™ Isometric MX |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.8W (Ta), 78W (Tc) |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
1.1mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds |
5630 pF @ 13 V |
Current - Continuous Drain (Id) @ 25°C |
40A (Ta), 214A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
68 nC @ 4.5 V |
Drain to Source Voltage (Vdss) |
25 V |
Vgs (Max) |
±16V |
FET Feature |
Schottky Diode (Body) |
International Rectifier IRF7207TR
In stock
Manufacturer |
International Rectifier |
---|---|
Mount |
Surface Mount |
Voltage Rating (DC) |
-20 V |
Packaging |
Tape & Reel (TR) |
Max Power Dissipation |
2.5 W |
Current Rating |
-5.4 A |
Rise Time |
24 ns |
Drain to Source Voltage (Vdss) |
20 V |
Continuous Drain Current (ID) |
5.4 A |
Input Capacitance |
780 pF |
Rds On Max |
60 mΩ |
Lead Free |
Contains Lead |
International Rectifier IRF7241PBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SO |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.5W (Ta) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
41mOhm @ 6.2A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
3220 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
6.2A (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
80 nC @ 10 V |
Drain to Source Voltage (Vdss) |
40 V |
Vgs (Max) |
±20V |
International Rectifier IRF7468PBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SO |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.5W (Ta) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
15.5mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2460 pF @ 20 V |
Current - Continuous Drain (Id) @ 25°C |
9.4A (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
34 nC @ 4.5 V |
Drain to Source Voltage (Vdss) |
40 V |
Vgs (Max) |
±12V |
International Rectifier IRF7607TRPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Supplier Device Package |
Micro8™ |
Base Product Number |
IRF7607 |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
1.8W (Ta) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
30mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1310 pF @ 15 V |
Current - Continuous Drain (Id) @ 25°C |
6.5A (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
22 nC @ 5 V |
Drain to Source Voltage (Vdss) |
20 V |
Vgs (Max) |
±12V |
International Rectifier IRF8113PBF
In stock
Manufacturer |
International Rectifier |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Supplier Device Package |
8-SO |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
International Rectifier |
Package |
Bulk |
Power Dissipation (Max) |
2.5W (Ta) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
HEXFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5.6mOhm @ 17.2A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2910 pF @ 15 V |
Current - Continuous Drain (Id) @ 25°C |
17.2A (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
36 nC @ 4.5 V |
Drain to Source Voltage (Vdss) |
30 V |
Vgs (Max) |
±20V |
International Rectifier IRF8327STRPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Power Dissipation |
42 W |
Package / Case |
DirectFET™ Isometric SQ |
Number of Pins |
8 |
Supplier Device Package |
DIRECTFET™ SQ |
Package Quantity |
4800 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
International Rectifier |
Power Dissipation (Max) |
2.2W (Ta), 42W (Tc) |
Product Status |
Active |
Package |
Bulk |
Turn-On Delay Time |
7.8 ns |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Packaging |
Tape & Reel |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-40 °C |
Max Power Dissipation |
2.2 W |
Technology |
MOSFET (Metal Oxide) |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Continuous Drain Current (ID) |
60 A |
Gate to Source Voltage (Vgs) |
20 V |
Input Capacitance (Ciss) (Max) @ Vds |
1430 pF @ 15 V |
Current - Continuous Drain (Id) @ 25°C |
14A (Ta), 60A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 4.5 V |
Rise Time |
8.9 ns |
Drain to Source Voltage (Vdss) |
30 V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
9.3 ns |
Rds On (Max) @ Id, Vgs |
7.3mOhm @ 14A, 10V |
FET Type |
N-Channel |
Drain to Source Breakdown Voltage |
30 V |
Input Capacitance |
1.43 nF |
Max Junction Temperature (Tj) |
150 °C |
Drain to Source Resistance |
10.9 mΩ |
Rds On Max |
7.3 mΩ |
On-State Resistance |
7.3 mΩ |
Radiation Hardening |
No |
Vgs(th) (Max) @ Id |
2.4V @ 25µA |
Lead Free |
Lead Free |