Showing 2377–2388 of 7598 results
International Rectifier IRLR8103VTRL
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mount |
Surface Mount |
| Voltage Rating (DC) |
30 V |
| Packaging |
Tape & Reel (TR) |
| Max Power Dissipation |
115 W |
| Current Rating |
89 A |
| Rise Time |
9 ns |
| Drain to Source Voltage (Vdss) |
30 V |
| Continuous Drain Current (ID) |
91 A |
| Input Capacitance |
2.672 nF |
| Rds On Max |
9 mΩ |
| Lead Free |
Contains Lead |
International Rectifier IRLR8743PBF
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D-Pak |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
135W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.1mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 100µA |
| Input Capacitance (Ciss) (Max) @ Vds |
4880 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
160A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
59 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
International Rectifier IRLS3036PBF
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
380W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4mOhm @ 165A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
11210 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C |
195A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
140 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±16V |
International Rectifier IRLU3802PBF
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
I-PAK |
| Drive Voltage (Max Rds On, Min Rds On) |
2.8V, 4.5V |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
88W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id |
1.9V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2490 pF @ 6 V |
| Current - Continuous Drain (Id) @ 25°C |
84A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
41 nC @ 5 V |
| Drain to Source Voltage (Vdss) |
12 V |
| Vgs (Max) |
±12V |
International Rectifier IRLU8729-701PBF
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Series |
HEXFET® |
| Supplier Device Package |
PG-TO-251-3-21 |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Power Dissipation (Max) |
55W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
8.9mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
58A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
16 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
International Rectifier JANTXV2N6806
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Mount |
Through Hole |
| Number of Pins |
3 |
| Packaging |
Bulk |
| Max Operating Temperature |
125 °C |
| Min Operating Temperature |
-55 °C |
| Power Dissipation |
75 W |
| Continuous Drain Current (ID) |
-4 A |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain to Source Breakdown Voltage |
-200 V |
| On-State Resistance |
800 mΩ |
| Radiation Hardening |
No |
IXYS FDM100-0045SP
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Additional Feature |
HIGH RELIABILITY |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
35 |
| Pin Count |
5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Rds On (Max) @ Id, Vgs |
7.2m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Drain-source On Resistance-Max |
0.0072Ohm |
| RoHS Status |
RoHS Compliant |
IXYS FDM47-06KC5
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUSi5-Pak™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Series |
CoolMOS™, HiPerDyn™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
UL RECOGNIZED, AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 3mA |
| JESD-30 Code |
R-PSIP-T5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
5 |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
47A |
| Drain-source On Resistance-Max |
0.045Ohm |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
1950 mJ |
| RoHS Status |
ROHS3 Compliant |