Showing 2389–2400 of 7598 results
IXYS FMD21-05QC
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
50 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Resistance |
190MOhm |
| Factory Lead Time |
20 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Number of Elements |
1 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
192W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 15A, 10V |
| Additional Feature |
HIGH RELIABILITY |
| Pin Count |
5 |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS FMD40-06KC
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
HIGH RELIABILITY |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
110 ns |
| Published |
2008 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Vgs(th) (Max) @ Id |
3.9V @ 2.7mA |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
280W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 20A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
38A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.07Ohm |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| Pin Count |
5 |
| RoHS Status |
ROHS3 Compliant |
IXYS FMD80-0045PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
i4-Pac™-5 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Additional Feature |
HIGH RELIABILITY |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
150A |
| Drain-source On Resistance-Max |
0.0049Ohm |
| RoHS Status |
RoHS Compliant |
IXYS Integrated Circuits Division CPC3701CTR
In stock
| Manufacturer |
IXYS Integrated Circuits Division |
|---|---|
| Factory Lead Time |
8 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-89 |
| Weight |
130.492855mg |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Power Dissipation (Max) |
1.1W Ta |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~125°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Element Configuration |
Single |
| Turn On Delay Time |
70 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1Ohm @ 300mA, 0V |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±15V |
| Fall Time (Typ) |
150 ns |
| Continuous Drain Current (ID) |
600mA |
| Gate to Source Voltage (Vgs) |
15V |
| FET Feature |
Depletion Mode |
| Drain to Source Resistance |
1Ohm |
| Rds On Max |
1 Ω |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS Integrated Circuits Division CPC3730C
In stock
| Manufacturer |
IXYS Integrated Circuits Division |
|---|---|
| Published |
2004 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-89 |
| Weight |
130.492855mg |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Power Dissipation (Max) |
1.6W Ta |
| Operating Temperature |
-55°C~125°C TJ |
| Packaging |
Tube |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Number of Channels |
1 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
35Ohm @ 140mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Drain to Source Voltage (Vdss) |
350V |
| Vgs (Max) |
±20V |
| Input Capacitance |
200pF |
| FET Feature |
Depletion Mode |
| Rds On Max |
30 Ω |
| RoHS Status |
RoHS Compliant |
IXYS IRFP260
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
280W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
90 ns |
| Published |
2000 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
280W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
55m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Element Configuration |
Single |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
46A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.055Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
184A |
| RoHS Status |
RoHS Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXCY01N90E
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
61 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e0 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
80 Ω @ 50mA, 10V |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
133pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
250mA |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.08Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
175A |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
IXYS IXFA12N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
12A |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
HiPerFET™, PolarP2™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
30 Weeks |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1830pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
IXYS IXFA130N10T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
GigaMOS™, HiPerFET™, TrenchT2™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
30 Weeks |
| Rds On (Max) @ Id, Vgs |
9.1m Ω @ 65A, 10V |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
130A |
| Drain-source On Resistance-Max |
0.0091Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFA130N15X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
390W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 65A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5230pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
IXYS IXFA14N85XHV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
460W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1043pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Drain to Source Voltage (Vdss) |
850V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFA230N075T2-7
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Packaging |
Tube |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
GigaMOS™, HiPerFET™, TrenchT2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
10500pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 50A, 10V |
| Pin Count |
7 |
| Reach Compliance Code |
unknown |
| Gate Charge (Qg) (Max) @ Vgs |
178nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Continuous Drain Current (ID) |
230A |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
700A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
850 mJ |
| JESD-30 Code |
R-PSSO-G6 |
| RoHS Status |
ROHS3 Compliant |