Showing 2413–2424 of 7598 results
IXYS IXFB100N50Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
264 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1560W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
49MOhm |
| Pin Count |
3 |
| Turn Off Delay Time |
50 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
100A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
40 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
49m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
255nC @ 10V |
| Rise Time |
250ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.56kW |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| Height |
26.59mm |
| Length |
20.29mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFB170N30P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 85A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
20000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
258nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
170A |
| Drain-source On Resistance-Max |
0.018Ohm |
| Pulsed Drain Current-Max (IDM) |
500A |
| DS Breakdown Voltage-Min |
300V |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXFB210N20P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
264 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
210A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1500W Tc |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 105A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.5kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
18600pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
255nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
210A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0105Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
600A |
| Avalanche Energy Rating (Eas) |
4000 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFB210N30P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
264 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
210A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1890W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
94 ns |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| JESD-30 Code |
R-PSIP-T3 |
| Mount |
Surface Mount, Through Hole |
| Factory Lead Time |
26 Weeks |
| Continuous Drain Current (ID) |
210A |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14.5m Ω @ 105A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
16200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
268nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.0145Ohm |
| Pulsed Drain Current-Max (IDM) |
550A |
| DS Breakdown Voltage-Min |
300V |
| Avalanche Energy Rating (Eas) |
4000 mJ |
| Height |
26.59mm |
| Length |
20.29mm |
| Width |
5.31mm |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
46 ns |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFB44N100P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
90 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
305nC @ 10V |
| Rise Time |
68ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.25kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
19000pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
56 ns |
| Continuous Drain Current (ID) |
44A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.22Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
110A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFB62N80Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
264 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
62 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
1560W Tc |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
62A |
| Turn On Delay Time |
54 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
140m Ω @ 31A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Rise Time |
300ns |
| Power Dissipation |
1.56kW |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| Height |
26.59mm |
| Length |
20.29mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
IXYS IXFB80N50Q2
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Resistance |
60mOhm |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
960W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Input Capacitance (Ciss) (Max) @ Vds |
15000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
960W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 8mA |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFC10N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
220 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Number of Elements |
1 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Published |
2013 |
| Series |
PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Operating Temperature (Max.) |
150°C |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation |
100W |
| Case Connection |
ISOLATED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Max Power Dissipation |
100W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Continuous Drain Current (ID) |
5A |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Drain to Source Resistance |
1.2Ohm |
| RoHS Status |
RoHS Compliant |
IXYS IXFC14N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
70 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
14A |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
630m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
42A |
| Avalanche Energy Rating (Eas) |
900 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFC16N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
71nC @ 10V |
| Rise Time |
32ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXFC30N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
166W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
30A |
| Input Capacitance (Ciss) (Max) @ Vds |
3820pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
166W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.25Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFC40N30Q
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
150°C |
| Packaging |
Tube |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Published |
2013 |
| Terminal Position |
SINGLE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
300V |
| Drain Current-Max (Abs) (ID) |
36A |
| Drain-source On Resistance-Max |
0.08Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| DS Breakdown Voltage-Min |
300V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |