Showing 2425–2436 of 7598 results
IXYS IXFE24N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Chassis Mount |
| Published |
2002 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Rise Time |
35ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
390m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 25V |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.39Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
96A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXFE44N50QD3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
39A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Chassis Mount |
| Packaging |
Tube |
| Published |
2004 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Turn Off Delay Time |
75 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
8000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Rise Time |
22ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
39A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.12Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
176A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFE55N50
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount |
| Packaging |
Tube |
| Published |
2003 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
UPPER |
| Turn Off Delay Time |
120 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9400pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 27.5A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
330nC @ 10V |
| Rise Time |
60ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
47A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.09Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
200A |
| RoHS Status |
RoHS Compliant |
IXYS IXFE73N30Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
66A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
82 ns |
| Terminal Form |
UNSPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
UPPER |
| Mounting Type |
Chassis Mount |
| Mount |
Chassis Mount |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
46m Ω @ 36.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
36ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
66A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
292A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH100N25P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Turn Off Delay Time |
100 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
30 Weeks |
| Published |
2006 |
| Series |
PolarHT™ HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
6300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
600W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
26ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.027Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH102N15T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2005 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
102A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
455W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
5220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
102A |
| Drain-source On Resistance-Max |
0.018Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH10N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
62 ns |
| Packaging |
Tube |
| Published |
2009 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
22ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-247AA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXFH110N10P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
65 ns |
| Pin Count |
3 |
| Factory Lead Time |
30 Weeks |
| Published |
2006 |
| Series |
PolarHT™ HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
110A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Threshold Voltage |
5V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH110N15T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
unknown |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
8600pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
16ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
110A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.013Ohm |
| Pulsed Drain Current-Max (IDM) |
300A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH120N15P
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
PolarHT™ HiPerFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Turn Off Delay Time |
85 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE ENERGY RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2006 |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
120A |
| Power Dissipation |
600W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
33 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
42ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
5V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.016Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH120N20P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
714W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
30 Weeks |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
22MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
31 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
714W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
152nC @ 10V |
| Rise Time |
35ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
120A |
| Threshold Voltage |
5V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFH12N100P
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247AD (IXFH) |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
21 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™, PolarP2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
463W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
36 ns |
| Rds On (Max) @ Id, Vgs |
1.05Ohm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Power Dissipation |
463W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1kV |
| Input Capacitance |
4.08nF |
| Drain to Source Resistance |
1.05Ohm |
| Rds On Max |
1.05 Ω |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |