Showing 2437–2448 of 7598 results
IXYS IXFH12N90
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
12A |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
51 ns |
| Published |
2003 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| Resistance |
900mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
900V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
12ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
12A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFH15N100Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
690W Tc |
| Number of Channels |
1 |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Rise Time |
250ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.05 Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
45A |
| Height |
16.26mm |
| Length |
16.26mm |
| Width |
5.3mm |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
690W |
| Lead Free |
Lead Free |
IXYS IXFH18N100Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
830W Tc |
| Turn Off Delay Time |
40 ns |
| Power Dissipation |
830W |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Continuous Drain Current (ID) |
18A |
| Turn On Delay Time |
37 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
660m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Rise Time |
33ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
13 ns |
| Threshold Voltage |
6.5V |
| Gate to Source Voltage (Vgs) |
30V |
| Case Connection |
DRAIN |
| Drain-source On Resistance-Max |
0.66Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
16.26mm |
| Length |
16.26mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
IXYS IXFH20N80Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
20A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
74 ns |
| Packaging |
Tube |
| Published |
2002 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
420mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
800V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
14 ns |
| Reverse Recovery Time |
250 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
27ns |
| Vgs (Max) |
±20V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
20A |
| Threshold Voltage |
4.5V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Dual Supply Voltage |
800V |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Nominal Vgs |
4.5 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXFH220N06T3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
220A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
440W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
HiperFET™, TrenchT3™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
136nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
220A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH22N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
390W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2310pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
22A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH23N80Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
74 ns |
| Published |
2004 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Qualification Status |
Not Qualified |
| Pin Count |
3 |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
23A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.4Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
92A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH24N50
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
65 ns |
| Current Rating |
24A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
230mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
30 ns |
| Element Configuration |
Single |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Rise Time |
33ns |
| Vgs (Max) |
±20V |
| Reverse Recovery Time |
250 ns |
| Continuous Drain Current (ID) |
24A |
| Pin Count |
3 |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Dual Supply Voltage |
500V |
| Recovery Time |
250 ns |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFH24N60X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
400W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1910pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
24A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH26N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
58 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
26A |
| Packaging |
Tube |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
230MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
26A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
78A |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXFH26N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
460W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
30 Weeks |
| Series |
PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
26A |
| Packaging |
Tube |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
460W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4150pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Rise Time |
27ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
26A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.27Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
65A |
| Avalanche Energy Rating (Eas) |
1200 mJ |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFH28N60P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
695W Tc |
| Turn Off Delay Time |
48 ns |
| Element Configuration |
Single |
| Factory Lead Time |
30 Weeks |
| Published |
2006 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
28A |
| Threshold Voltage |
5V |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Power Dissipation |
695W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.26Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |