Showing 2449–2460 of 7598 results
IXYS IXFH30N50
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
110 ns |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
160mOhm |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
26 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
42ns |
| Qualification Status |
Not Qualified |
| Pin Count |
3 |
| Reverse Recovery Time |
250 ns |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Dual Supply Voltage |
500V |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Nominal Vgs |
4 V |
| REACH SVHC |
No SVHC |
| Element Configuration |
Single |
| RoHS Status |
RoHS Compliant |
IXYS IXFH30N50Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2001 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
5700pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
42ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.16Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXFH30N50Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
690W Tc |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Turn Off Delay Time |
26 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Rise Time |
250ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
690W |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
90A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Height |
16.26mm |
| Length |
16.26mm |
| Width |
5.3mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH32N100X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
890W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
6V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4075pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH32N50Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
75 ns |
| Packaging |
Tube |
| Published |
2001 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
160mOhm |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
416W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4925pF @ 25V |
| Rise Time |
42ns |
| Vgs (Max) |
±20V |
| Pin Count |
3 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
32A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFH34N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
540W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
34A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH40N30Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
40 ns |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
8 Weeks |
| Published |
2011 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
80MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Voltage - Rated DC |
300V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
80m Ω @ 500mA, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
40A |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
35ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFH44N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
658W Tc |
| Turn Off Delay Time |
85 ns |
| Pin Count |
3 |
| Factory Lead Time |
30 Weeks |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Current Rating |
44A |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
44A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
140m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
29ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
650W |
| Threshold Voltage |
5V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFH4N100Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Qualification Status |
Not Qualified |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
32 ns |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
4A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
16A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |
IXYS IXFH50N20
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
72 ns |
| Voltage - Rated DC |
200V |
| Factory Lead Time |
8 Weeks |
| Published |
2000 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
45mOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
50A |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
15ns |
| Pin Count |
3 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Dual Supply Voltage |
200V |
| Recovery Time |
200 ns |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFH52N30Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
80 ns |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
60mOhm |
| Terminal Finish |
TIN SILVER COPPER |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs (Max) |
±20V |
| Current Rating |
52A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
60ns |
| Fall Time (Typ) |
25 ns |
| Reverse Recovery Time |
250 ns |
| Voltage - Rated DC |
300V |
| Continuous Drain Current (ID) |
52A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
208A |
| Dual Supply Voltage |
300V |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Contains Lead |
IXYS IXFH52N50P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
960W Tc |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
960W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 26A, 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
113nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
52A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.12Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
150A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| JESD-30 Code |
R-PSFM-T3 |
| RoHS Status |
ROHS3 Compliant |