Showing 2461–2472 of 7598 results
IXYS IXFH60N25Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2000 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
80 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
60ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
47m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.047Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFH60N50P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1040W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
37 ns |
| Published |
2012 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Continuous Drain Current (ID) |
60A |
| Threshold Voltage |
5V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Case Connection |
DRAIN |
| Power Dissipation |
1.04kW |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
18 ns |
| Lead Free |
Lead Free |
IXYS IXFH66N20Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
66A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
50 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2003 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
18ns |
| Element Configuration |
Single |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
14 ns |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
66A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.04Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
264A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFH75N10Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
1999 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Turn Off Delay Time |
65 ns |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 37.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Rise Time |
65ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.02Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
IXYS IXFH76N07-12
In stock
| Manufacturer |
IXYS |
|---|---|
| Voltage - Rated DC |
70V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
130 ns |
| Published |
2000 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
12MOhm |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs(th) (Max) @ Id |
3.4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4400pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 40A, 10V |
| Current Rating |
76A |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
70ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
55 ns |
| Continuous Drain Current (ID) |
76A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
70V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
IXYS IXFH76N15T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
350W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™, TrenchT2™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
97nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
IXYS IXFH80N08
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2001 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Turn Off Delay Time |
95 ns |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 40A, 10V |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
75ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.009Ohm |
| Drain to Source Breakdown Voltage |
80V |
| RoHS Status |
RoHS Compliant |
IXYS IXFH80N20Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Resistance |
28MOhm |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2000 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
75 ns |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Current Rating |
80A |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 500mA, 10V |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
200V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFH80N25X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
390W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
83nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFH88N30P
In stock
| Manufacturer |
IXYS |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
88A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Turn Off Delay Time |
96 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
HiPerFET™, PolarP2™ |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Continuous Drain Current (ID) |
88A |
| Threshold Voltage |
5V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
24ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.04Ohm |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
21.46mm |
| Length |
16.26mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
600W |
| Lead Free |
Lead Free |
IXYS IXFH8N80
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
180W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
70 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
180W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 2.5mA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain to Source Breakdown Voltage |
800V |
| Turn On Time-Max (ton) |
210ns |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFJ20N85X
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
9.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2017 |
| Factory Lead Time |
19 Weeks |
| Part Status |
Active |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1660pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Drain to Source Voltage (Vdss) |
850V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |