Showing 2473–2484 of 7598 results
IXYS IXFJ26N50P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™, Polar3™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
180W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Factory Lead Time |
8 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
265m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
14A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFK120N25
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
560W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2002 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
175 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
9400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
400nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 8mA |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.022Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
480A |
| RoHS Status |
RoHS Compliant |
IXYS IXFK140N25T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
960W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
GigaMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17m Ω @ 60A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
19000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
255nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
140A |
| Drain-source On Resistance-Max |
0.017Ohm |
| Pulsed Drain Current-Max (IDM) |
380A |
| DS Breakdown Voltage-Min |
250V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXFK150N15
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
560W Tc |
| Turn Off Delay Time |
110 ns |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 8mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.5m Ω @ 75A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
9100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
360nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
60ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
150A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0125Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
600A |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
IXYS IXFK150N30X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-264-3, TO-264AA |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
890W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
19 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
254nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13.1nF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
150A |
| Drain-source On Resistance-Max |
0.0083Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
300V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFK170N10P
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
715W Tc |
| Turn Off Delay Time |
90 ns |
| Packaging |
Bulk |
| Published |
2006 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
10mOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Fall Time (Typ) |
33 ns |
| Reverse Recovery Time |
150 ns |
| Power Dissipation |
714W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
198nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
170A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Nominal Vgs |
5 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFK170N20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
170A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Factory Lead Time |
30 Weeks |
| Series |
GigaMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
19600pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 60A, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
265nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
170A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Pulsed Drain Current-Max (IDM) |
470A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFK180N25T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1390W Tc |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Series |
GigaMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Rds On (Max) @ Id, Vgs |
12.9m Ω @ 60A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
28000pF @ 25V |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
345nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| Drain-source On Resistance-Max |
0.0129Ohm |
| Pulsed Drain Current-Max (IDM) |
500A |
| DS Breakdown Voltage-Min |
250V |
| RoHS Status |
ROHS3 Compliant |
| Reach Compliance Code |
unknown |
| Lead Free |
Lead Free |
IXYS IXFK220N15P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
220A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
30 Weeks |
| Published |
2011 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
15400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
162nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
220A |
| Drain-source On Resistance-Max |
0.009Ohm |
| Pulsed Drain Current-Max (IDM) |
600A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFK230N20T
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-609 Code |
e1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Current - Continuous Drain (Id) @ 25℃ |
230A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1670W Tc |
| Packaging |
Tube |
| Published |
2011 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Series |
GigaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.67kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 60A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
28000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
378nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
230A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
630A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
IXYS IXFK240N15T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Turn Off Delay Time |
145 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
GigaMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
32000pF @ 25V |
| Output Voltage |
150V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Nominal Supply Current |
120A |
| Operating Mode |
ENHANCEMENT MODE |
| Output Current |
240A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
125 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 60A, 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
460nC @ 10V |
| Rise Time |
125ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
145 ns |
| Continuous Drain Current (ID) |
240A |
| Drain-source On Resistance-Max |
0.0052Ohm |
| Pulsed Drain Current-Max (IDM) |
600A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Number of Drivers |
1 |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXFK240N25X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
19 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 120A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
23800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
345nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |