Showing 2497–2508 of 7598 results
IXYS IXFK64N60P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1130W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
66 ns |
| Published |
2011 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
64A |
| Turn On Delay Time |
43 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
95m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| Power Dissipation |
1.13kW |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.095Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Height |
26.16mm |
| Length |
19.96mm |
| Width |
5.13mm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
IXYS IXFK74N50P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
74A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1400W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Published |
2011 |
| Series |
HiPerFET™, PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
77m Ω @ 500mA, 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
74A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.077Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
185A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFK80N15Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
68 ns |
| Published |
2001 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
55ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0225Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFK80N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1040W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
65MOhm |
| Turn Off Delay Time |
70 ns |
| Additional Feature |
AVALANCHE RATED |
| Input Capacitance (Ciss) (Max) @ Vds |
12700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
197nC @ 10V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.04kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Voltage - Rated DC |
500V |
| Current Rating |
80A |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFK80N50Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Pin Count |
3 |
| Turn Off Delay Time |
43 ns |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
1.25kW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
10000pF @ 25V |
| Rise Time |
250ns |
| Vgs (Max) |
±30V |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.065Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Height |
26.16mm |
| Length |
19.96mm |
| Width |
5.13mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFK80N60P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1300W Tc |
| Turn Off Delay Time |
87 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
30 Weeks |
| Published |
2011 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
1.3kW |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
80A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
48 ns |
| Drain-source On Resistance-Max |
0.07Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
26.16mm |
| Length |
19.96mm |
| Width |
5.13mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFK90N20
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Published |
2000 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
20mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
200V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
90A |
| Gate Charge (Qg) (Max) @ Vgs |
380nC @ 10V |
| Rise Time |
80ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9000pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
90A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Dual Supply Voltage |
200V |
| Nominal Vgs |
4 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFK94N50P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Supplier Device Package |
TO-264AA (IXFK) |
| Current - Continuous Drain (Id) @ 25℃ |
94A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1300W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Published |
2010 |
| Series |
HiPerFET™, PolarHV™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Continuous Drain Current (ID) |
94A |
| Gate to Source Voltage (Vgs) |
30V |
| Rds On (Max) @ Id, Vgs |
55mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Power Dissipation |
1.3kW |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
500V |
| Input Capacitance |
13.7nF |
| Drain to Source Resistance |
55mOhm |
| Rds On Max |
55 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
IXYS IXFL210N30P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
26 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS264™ |
| Number of Pins |
264 |
| Current - Continuous Drain (Id) @ 25℃ |
108A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
520W Tc |
| Turn Off Delay Time |
94 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
46 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 105A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
16200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
268nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
108A |
| Gate to Source Voltage (Vgs) |
20V |
| Height |
26.42mm |
| Length |
20.29mm |
| Width |
5.31mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFL30N120P
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
95 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUSi5-Pak™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™, PolarP2™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Power Dissipation (Max) |
357W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
19000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
310nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
357W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
56 ns |
| Continuous Drain Current (ID) |
18A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1.2kV |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFL34N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS264™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
550W Tc |
| Turn Off Delay Time |
110 ns |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
280mOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
9200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
380nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
550W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
65ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1kV |
| Avalanche Energy Rating (Eas) |
4000 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFL44N60
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2003 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS264™ |
| Number of Pins |
264 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
41A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-30 Code |
R-PSIP-T3 |
| Rise Time |
55ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
42 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
330nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
41A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.13Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
176A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| Height |
26.42mm |
| Length |
20.29mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |