Showing 2533–2544 of 7598 results
IXYS IXFN64N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700W Tc |
| Turn Off Delay Time |
79 ns |
| Terminal Position |
UPPER |
| Factory Lead Time |
30 Weeks |
| Published |
2003 |
| Series |
PolarHV™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
96MOhm |
| Terminal Finish |
Nickel (Ni) |
| Additional Feature |
UL RECOGNIZED, AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
UNSPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
96m Ω @ 500mA, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
64A |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
3500 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFN80N60P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Chassis Mount, Panel, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
66A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
960W Tc |
| Pin Count |
4 |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Turn Off Delay Time |
87 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
66A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
48 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
960W |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.07Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
9.6mm |
| Length |
38.23mm |
| Width |
25.07mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFP10N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HiPerFET™, PolarHT™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
62 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
22ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Height |
9.15mm |
| Length |
10.66mm |
| Width |
4.83mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP12N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
65 ns |
| Current Rating |
12A |
| Factory Lead Time |
26 Weeks |
| Published |
2006 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1830pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
27ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
12A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Height |
9.15mm |
| Length |
10.66mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFP12N50PM
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
HiPerFET™, PolarP2™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1830pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSFM-T3 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP12N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
180W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
310m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1134pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
IXYS IXFP22N65X2M
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
37W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
145m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2190pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
IXYS IXFP230N075T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
HiPerFET™, TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 50A, 10V |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
10500pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
178nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Continuous Drain Current (ID) |
230A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
700A |
| DS Breakdown Voltage-Min |
75V |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP24N60X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
400W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1910pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
24A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP26N30X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
170W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
19 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
66m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1.465nF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP26N50P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
26 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
26A |
| Gate to Source Voltage (Vgs) |
30V |
| Height |
16mm |
| Length |
10.66mm |
| Width |
4.83mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFP4N85X
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Factory Lead Time |
19 Weeks |
| Part Status |
Active |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.5 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
247pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Drain to Source Voltage (Vdss) |
850V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |