Showing 2569–2580 of 7598 results
IXYS IXFR30N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
166W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Voltage - Rated DC |
600V |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
3820pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
166W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Rise Time |
20ns |
| Current Rating |
30A |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.25Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXFR32N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
85 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Rise Time |
24ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSFM-T3 |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.29Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFR40N50Q2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
29A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
320W Tc |
| Turn Off Delay Time |
42 ns |
| Voltage - Rated DC |
500V |
| Mount |
Through Hole |
| Published |
2004 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
170MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
320W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 20A, 10V |
| Current Rating |
29A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
13ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
29A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFR40N90P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
77 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
14000pF @ 25V |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 20A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
21A |
| Drain-source On Resistance-Max |
0.23Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFR44N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
150MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
70 ns |
| Voltage - Rated DC |
500V |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
44A |
| Input Capacitance (Ciss) (Max) @ Vds |
5440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
1700 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFR44N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
75 ns |
| JESD-30 Code |
R-PSIP-T3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
22ns |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
25A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
3400 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
300W |
| Lead Free |
Lead Free |
IXYS IXFR48N50Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2003 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
310W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
110MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
310W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Rise Time |
22ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
192A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFR66N50Q2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
60 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
16ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9125pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.085Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
264A |
| Avalanche Energy Rating (Eas) |
4000 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFR80N60P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
540W Tc |
| Turn Off Delay Time |
87 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Turn On Delay Time |
48 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
76m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
48A |
| Gate to Source Voltage (Vgs) |
30V |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFT120N30X3HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
735W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
10.5nF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFT12N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
62 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.05 Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
33ns |
| Pin Count |
4 |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
48A |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXFT13N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
12.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
62 ns |
| Packaging |
Tube |
| Published |
2000 |
| Series |
HiPerFET™ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Resistance |
900mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
1kV |
| Terminal Form |
GULL WING |
| JESD-609 Code |
e3 |
| Current Rating |
13A |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
155nC @ 10V |
| Rise Time |
33ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
12.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
50A |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |