Showing 2593–2604 of 7598 results
IXYS IXFT78N60X3HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Supplier Device Package |
TO-268HV (IXFT) |
| Base Product Number |
IXFT78 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
IXYS |
| Package |
Tube |
| Power Dissipation (Max) |
780W (Tc) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HiPerFET™, Ultra X3 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
38mOhm @ 39A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
78A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
70 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±20V |
IXYS IXFT80N65X2HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
890W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
IXYS IXFT96N20P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Series |
PolarHT™ HiPerFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
600W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
96A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.024Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
225A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFT9N80Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
HiPerFET™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
180W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Bulk |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2001 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
180W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 2.5mA |
| Pin Count |
2 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
36A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFV12N90P
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
220 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3080pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 6A, 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.9Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
24A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
RoHS Compliant |
IXYS IXFV12N90PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Package / Case |
PLUS-220SMD |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
HiPerFET™, PolarP2™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 6A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.9Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
24A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXFV14N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
220 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Turn Off Delay Time |
62 ns |
| Additional Feature |
AVALANCHE RATED |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
720m Ω @ 500mA, 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
14A |
| Drain-source On Resistance-Max |
0.72Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXFV15N100P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
543W Tc |
| Turn Off Delay Time |
44 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2008 |
| Series |
HiPerFET™, PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
97nC @ 10V |
| Rise Time |
44ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
543W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
760m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5140pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
58 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.76Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXFV22N60PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
22A |
| Package / Case |
PLUS-220SMD |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
60 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarHT™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 4mA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
66A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
IXYS IXFV26N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
460W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
26A |
| Input Capacitance (Ciss) (Max) @ Vds |
4150pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
460W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
26A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.27Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
65A |
| Avalanche Energy Rating (Eas) |
1200 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFV30N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
80 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
30A |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.24Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFV52N30PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
PLUS-220SMD |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
60 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PolarHT™ HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
22ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
66m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3490pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
52A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.066Ohm |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
150A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |