Showing 2617–2628 of 7598 results
IXYS IXFX27N80Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
50 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
320m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
28ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
27A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
108A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFX30N50Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
416W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
3950pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
416W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
42ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.16Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXFX32N80P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
830W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
85 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
830W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 16A, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
24ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
32A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.27Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX34N80
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
560W Tc |
| Turn Off Delay Time |
100 ns |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
8 Weeks |
| Published |
2000 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Resistance |
240MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Voltage - Rated DC |
800V |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
34A |
| Input Capacitance (Ciss) (Max) @ Vds |
7500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 10V |
| Rise Time |
45ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
34A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
800V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXFX360N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
360A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
GigaMOS™ HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Vgs(th) (Max) @ Id |
5V @ 3mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.9m Ω @ 100A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
33000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
525nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
360A |
| Drain-source On Resistance-Max |
0.0029Ohm |
| Pulsed Drain Current-Max (IDM) |
900A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXFX44N55Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Bulk |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
6400pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Rise Time |
20ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
44A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.12Ohm |
| Drain to Source Breakdown Voltage |
550V |
| Pulsed Drain Current-Max (IDM) |
176A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX44N60
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
560W Tc |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
8900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
330nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Current Rating |
44A |
| Voltage - Rated DC |
600V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
44A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXFX44N80Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
63 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| JESD-30 Code |
R-PSIP-T3 |
| Factory Lead Time |
30 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Power Dissipation (Max) |
1250W Tc |
| Element Configuration |
Single |
| Rise Time |
300ns |
| Vgs (Max) |
±30V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
45 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9840pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.25kW |
| Continuous Drain Current (ID) |
44A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.19Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
130A |
| Avalanche Energy Rating (Eas) |
3500 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX48N60Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1000W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Turn Off Delay Time |
40 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
48A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
37 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
140m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
7020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
300ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1kW |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.14Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFX52N100X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
6V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6725pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
245nC @ 10V |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX62N25
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
390W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
115 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
390W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 31A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
62A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
248A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX64N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
830W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
85MOhm |
| Turn Off Delay Time |
85 ns |
| Additional Feature |
AVALANCHE RATED |
| Input Capacitance (Ciss) (Max) @ Vds |
8700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
830W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 8mA |
| Voltage - Rated DC |
500V |
| Current Rating |
64A |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
64A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |