Showing 2629–2640 of 7598 results
IXYS IXFX64N50Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1000W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Turn Off Delay Time |
46 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
64A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
36 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Rise Time |
250ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1kW |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.085Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
4000 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFX64N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1040W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
HiPerFET™, PolarHT™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
96MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
79 ns |
| Voltage - Rated DC |
600V |
| Rds On (Max) @ Id, Vgs |
96m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.04kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
64A |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
64A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
150A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFX74N50P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
74A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1400W Tc |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
HiPerFET™, PolarHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
77m Ω @ 500mA, 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
74A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.077Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
185A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| JESD-30 Code |
R-PSIP-T3 |
| RoHS Status |
RoHS Compliant |
IXYS IXFX80N50Q3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1250W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Turn Off Delay Time |
43 ns |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
65MOhm |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
1.25kW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
10000pF @ 25V |
| Rise Time |
250ns |
| Vgs (Max) |
±30V |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXFX90N20Q
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500W Tc |
| Turn Off Delay Time |
82 ns |
| Voltage - Rated DC |
200V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Pin Count |
3 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| Rise Time |
31ns |
| Vgs (Max) |
±20V |
| Current Rating |
90A |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.022Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Contains Lead |
IXYS IXFX90N60X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1100W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
38m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
90A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFX98N50P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
98A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1300W Tc |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HiPerFET™, Polar3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Turn Off Delay Time |
65 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
6 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
197nC @ 10V |
| Rise Time |
8ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.3kW |
| Continuous Drain Current (ID) |
98A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.05Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
245A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXFY30N25X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
176W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFY36N20X3
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Factory Lead Time |
19 Weeks |
| Packaging |
Tube |
| Series |
HiPerFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
176W Tc |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1425pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
36A |
| Drain-source On Resistance-Max |
0.045Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
300 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXFY4N85X
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
19 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.5 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
247pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Drain to Source Voltage (Vdss) |
850V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXKC15N60C5
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| Packaging |
Tube |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
165MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 900μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 100V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
114W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 12A, 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
522 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Lead Free |
IXYS IXKC20N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
67 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
75 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
| Rise Time |
5ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
14A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |