Showing 2641–2652 of 7598 results
IXYS IXKC40N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
67 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
32 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
95m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
28A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
24A |
| Drain-source On Resistance-Max |
0.096Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
690 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXKN40N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Form |
UNSPECIFIED |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
290W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
110 ns |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Nickel (Ni) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount |
| Factory Lead Time |
28 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Rise Time |
30ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
290W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 2.5mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.07Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
1800 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
IXYS IXKN45N80C
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Terminal Position |
UPPER |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Nickel (Ni) |
| Additional Feature |
UL RECOGNIZED, AVALANCHE RATED |
| Turn Off Delay Time |
75 ns |
| Terminal Form |
UNSPECIFIED |
| Vgs(th) (Max) @ Id |
3.9V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs |
360nC @ 10V |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
74m Ω @ 44A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
44A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
670 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXKN75N60C
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
560W Tc |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
110 ns |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Resistance |
36MOhm |
| Terminal Finish |
Nickel (Ni) |
| Mount |
Chassis Mount, Screw |
| Factory Lead Time |
28 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
500nC @ 10V |
| Terminal Form |
UNSPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 5mA |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Terminal Position |
UPPER |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
250A |
| FET Feature |
Super Junction |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXKP20N60C5
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
50 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
208W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 100V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
20A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
IXYS IXKP20N60C5M
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
50 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
32 Weeks |
| Published |
2009 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
5ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
33W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 100V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
7.6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
IXYS IXKR47N60C5
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Finish |
TIN SILVER COPPER |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 3mA |
| Terminal Position |
SINGLE |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
47A |
| Drain-source On Resistance-Max |
0.045Ohm |
| DS Breakdown Voltage-Min |
600V |
| FET Feature |
Super Junction |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXKT70N60C5
In stock
| Manufacturer |
IXYS |
|---|---|
| Mount |
Surface Mount |
| Package / Case |
TO-268-3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Min.) |
-55°C |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Transistor Application |
SWITCHING |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
68A |
| JEDEC-95 Code |
TO-268AA |
| Drain Current-Max (Abs) (ID) |
66A |
| Drain-source On Resistance-Max |
0.045Ohm |
| Avalanche Energy Rating (Eas) |
1950 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXT-1-1N100S1-TR
In stock
| Manufacturer |
IXYS |
|---|---|
| Mount |
Surface Mount |
| Package / Case |
SOIC |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
1000V |
| Continuous Drain Current (ID) |
1.5A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA02N250HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Weight |
1.770002g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
32 ns |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Drain to Source Voltage (Vdss) |
2500V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450 Ω @ 50mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
116pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
7.4nC @ 10V |
| Rise Time |
19ns |
| Power Dissipation |
83W |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain to Source Breakdown Voltage |
2.5kV |
| Pulsed Drain Current-Max (IDM) |
0.6A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
IXYS IXTA06N120P
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
PolarVHV™ |
| JESD-609 Code |
e3 |
| Published |
2007 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
24ns |
| Drain to Source Voltage (Vdss) |
1200V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
42W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
32 Ω @ 300mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13.3nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
600mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.6A |
| Drain-source On Resistance-Max |
34Ohm |
| Drain to Source Breakdown Voltage |
1.2kV |
| Pulsed Drain Current-Max (IDM) |
1.2A |
| Avalanche Energy Rating (Eas) |
50 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTA100N04T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
15.8 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
28 Weeks |
| Series |
TrenchT2™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2690pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
25.5nC @ 10V |
| Rise Time |
5.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.4 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| RoHS Status |
ROHS3 Compliant |