Showing 2653–2664 of 7598 results
IXYS IXTA102N15T
In stock
| Manufacturer |
IXYS |
|---|---|
| Reach Compliance Code |
unknown |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
102A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
455W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
30 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
5220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
455W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Pin Count |
4 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
102A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.018Ohm |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA110N055T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Reach Compliance Code |
not_compliant |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Published |
2006 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
3080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Pin Count |
4 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
110A |
| Drain Current-Max (Abs) (ID) |
112A |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| JESD-30 Code |
R-PSFM-G6 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA110N12T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchT2™ |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
517W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2017 |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6570pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Drain to Source Voltage (Vdss) |
120V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
IXYS IXTA12N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
Polar™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
28 Weeks |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1830pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Current Rating |
12A |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
IXYS IXTA12N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
15 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
180W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA15N50L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
Linear L2™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Surface Mount |
| Factory Lead Time |
28 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
4080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
123nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
480m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Reach Compliance Code |
not_compliant |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| Drain-source On Resistance-Max |
0.48Ohm |
| Pulsed Drain Current-Max (IDM) |
35A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA160N10T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
49 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Published |
2006 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| JESD-30 Code |
R-PSFM-G6 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
430W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
132nC @ 10V |
| Rise Time |
61ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
160A |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
430A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA16N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
70 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Mount |
Surface Mount |
| Factory Lead Time |
28 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
28ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 25V |
| Pin Count |
4 |
| Current Rating |
16A |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.4Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
IXYS IXTA180N085T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchMV™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7500pF @ 25V |
| JESD-30 Code |
R-PSSO-G6 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
430W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
70ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Continuous Drain Current (ID) |
180A |
| Drain-source On Resistance-Max |
0.0055Ohm |
| Drain to Source Breakdown Voltage |
85V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTA180N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| Series |
TrenchMV™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
6.4MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
28 Weeks |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
151nC @ 10V |
| Rise Time |
54ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
180A |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
IXYS IXTA180N10T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchMV™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
6.4MOhm |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSFM-G6 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
151nC @ 10V |
| Rise Time |
54ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
180A |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTA200N085T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchMV™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
5MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Published |
2006 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 25V |
| JESD-30 Code |
R-PSSO-G6 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
152nC @ 10V |
| Rise Time |
80ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
64 ns |
| Continuous Drain Current (ID) |
200A |
| Drain to Source Breakdown Voltage |
85V |
| Pulsed Drain Current-Max (IDM) |
540A |
| Avalanche Energy Rating (Eas) |
1 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |