Transistors - FETs/MOSFETs - Single

IXYS IXTA230N04T4

In stock

SKU: IXTA230N04T4-11
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

230A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

340W Tc

Operating Temperature

-55°C~175°C TJ

Series

TrenchT4™

Part Status

Active

Reach Compliance Code

compliant

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.9m Ω @ 115A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±15V

IXYS IXTA26P10T

In stock

SKU: IXTA26P10T-11
Manufacturer

IXYS

Terminal Form

GULL WING

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

26A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

150W Tc

Operating Temperature

-55°C~150°C TJ

Published

2012

Series

TrenchP™

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

AVALANCHE RATED

Terminal Position

SINGLE

Mount

Surface Mount

Factory Lead Time

28 Weeks

Input Capacitance (Ciss) (Max) @ Vds

3820pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

90m Ω @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Pin Count

3

Reach Compliance Code

unknown

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±15V

Continuous Drain Current (ID)

26A

JEDEC-95 Code

TO-263AA

Drain-source On Resistance-Max

0.09Ohm

Pulsed Drain Current-Max (IDM)

80A

DS Breakdown Voltage-Min

100V

Avalanche Energy Rating (Eas)

300 mJ

JESD-30 Code

R-PSSO-G2

RoHS Status

ROHS3 Compliant

IXYS IXTA27N20T

In stock

SKU: IXTA27N20T-11
Manufacturer

IXYS

Mount

Surface Mount

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

27A Tc

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

FET Type

N-Channel

Drain to Source Voltage (Vdss)

20V

Continuous Drain Current (ID)

27A

RoHS Status

ROHS3 Compliant

IXYS IXTA340N04T4

In stock

SKU: IXTA340N04T4-11
Manufacturer

IXYS

Factory Lead Time

28 Weeks

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

340A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

480W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Series

TrenchT4™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.7m Ω @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

256nC @ 10V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±15V

RoHS Status

ROHS3 Compliant

IXYS IXTA340N04T4-7

In stock

SKU: IXTA340N04T4-7-11
Manufacturer

IXYS

Pbfree Code

yes

Mount

Surface Mount

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

340A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

480W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Series

TrenchT4™

Factory Lead Time

24 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Reach Compliance Code

unknown

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1.7m Ω @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

256nC @ 10V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±15V

Continuous Drain Current (ID)

340A

RoHS Status

ROHS3 Compliant

IXYS IXTA34N65X2

In stock

SKU: IXTA34N65X2-11
Manufacturer

IXYS

Factory Lead Time

15 Weeks

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

34A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

540W Tc

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Reach Compliance Code

compliant

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

96m Ω @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Drain to Source Voltage (Vdss)

650V

Vgs (Max)

±30V

IXYS IXTA36N30P

In stock

SKU: IXTA36N30P-11
Manufacturer

IXYS

Series

PolarHT™

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

36A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

300W Tc

Turn Off Delay Time

97 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Resistance

110MOhm

Terminal Finish

Matte Tin (Sn)

Additional Feature

AVALANCHE RATED

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

28 Weeks

Vgs(th) (Max) @ Id

5.5V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

300W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

110m Ω @ 18A, 10V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Reach Compliance Code

not_compliant

Rise Time

30ns

Vgs (Max)

±30V

Fall Time (Typ)

28 ns

Continuous Drain Current (ID)

36A

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

300V

Pulsed Drain Current-Max (IDM)

90A

Avalanche Energy Rating (Eas)

1000 mJ

RoHS Status

ROHS3 Compliant

Pin Count

4

Lead Free

Lead Free

IXYS IXTA3N100D2HV

In stock

SKU: IXTA3N100D2HV-11
Manufacturer

IXYS

Terminal Form

GULL WING

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3A Tj

Drive Voltage (Max Rds On, Min Rds On)

0V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Power Dissipation (Max)

125W Tc

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

2 (1 Year)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Terminal Position

SINGLE

Mounting Type

Surface Mount

Factory Lead Time

24 Weeks

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 25V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6 Ω @ 1.5A, 0V

Reach Compliance Code

not_compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

37.5nC @ 5V

Drain to Source Voltage (Vdss)

1000V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

3A

Drain-source On Resistance-Max

6Ohm

FET Feature

Depletion Mode

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

RoHS Compliant

IXYS IXTA3N110

In stock

SKU: IXTA3N110-11
Manufacturer

IXYS

JESD-609 Code

e3

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

150W Tc

Turn Off Delay Time

32 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2001

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Resistance

4.5Ohm

Terminal Finish

Matte Tin (Sn)

Additional Feature

AVALANCHE RATED

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mount

Surface Mount

Factory Lead Time

28 Weeks

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

Rise Time

15ns

Drain to Source Voltage (Vdss)

1100V

Pin Count

4

Vgs (Max)

±20V

Fall Time (Typ)

18 ns

Continuous Drain Current (ID)

3A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

3A

Drain to Source Breakdown Voltage

1.1kV

Pulsed Drain Current-Max (IDM)

12A

Avalanche Energy Rating (Eas)

700 mJ

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

IXYS IXTA3N120

In stock

SKU: IXTA3N120-11
Manufacturer

IXYS

Turn Off Delay Time

32 ns

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

TO-263 (IXTA)

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Voltage - Rated DC

1.2kV

Factory Lead Time

28 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2004

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

4.5Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Power Dissipation (Max)

200W Tc

Current Rating

3A

Vgs (Max)

±20V

Fall Time (Typ)

18 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Rise Time

15ns

Drain to Source Voltage (Vdss)

1200V

Element Configuration

Single

Power Dissipation

150W

Continuous Drain Current (ID)

3A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

1.1kV

Input Capacitance

1.35nF

Drain to Source Resistance

4.5Ohm

Rds On Max

4.5 Ω

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

IXYS IXTA3N150HV

In stock

SKU: IXTA3N150HV-11
Manufacturer

IXYS

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

250W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2005

JESD-609 Code

e3

Factory Lead Time

24 Weeks

Terminal Finish

Matte Tin (Sn)

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Reach Compliance Code

not_compliant

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

7.3 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1375pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

38.6nC @ 10V

Drain to Source Voltage (Vdss)

1500V

Vgs (Max)

±30V

Continuous Drain Current (ID)

3A

RoHS Status

ROHS3 Compliant

IXYS IXTA3N50P

In stock

SKU: IXTA3N50P-11
Manufacturer

IXYS

Published

2006

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

70W Tc

Turn Off Delay Time

38 ns

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Series

PolarHV™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

500V

Terminal Form

GULL WING

Packaging

Tube

Current Rating

3A

Input Capacitance (Ciss) (Max) @ Vds

409pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

70W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2 Ω @ 1.8A, 10V

Vgs(th) (Max) @ Id

5.5V @ 50μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

4

Rise Time

15ns

Vgs (Max)

±30V

Fall Time (Typ)

12 ns

Continuous Drain Current (ID)

3.6A

Gate to Source Voltage (Vgs)

30V

Drain-source On Resistance-Max

2Ohm

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

8A

Avalanche Energy Rating (Eas)

180 mJ

RoHS Status

RoHS Compliant

Lead Free

Lead Free