Showing 2677–2688 of 7598 results
IXYS IXTA460P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2010 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
28 Weeks |
| Series |
PolarP2™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2890pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 12A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
24A |
| Drain-source On Resistance-Max |
0.27Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA4N150HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
280W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Factory Lead Time |
24 Weeks |
| Terminal Finish |
Matte Tin (Sn) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
not_compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1576pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
44.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
1500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
4A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA50N25T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
30 Weeks |
| Published |
2005 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
78nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
50A |
| Drain-source On Resistance-Max |
0.05Ohm |
| DS Breakdown Voltage-Min |
250V |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA64N10L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Finish |
Matte Tin (Sn) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Series |
Linear L2™ |
| Published |
2013 |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tube |
| Turn Off Delay Time |
38 ns |
| Power Dissipation (Max) |
357W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Weight |
1.946308g |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
28 Weeks |
| Turn On Delay Time |
14 ns |
| Vgs (Max) |
±30V |
| Width |
9.65mm |
| Length |
10.41mm |
| Height |
4.83mm |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
64A |
| Fall Time (Typ) |
11 ns |
| Drain to Source Voltage (Vdss) |
100V |
| Number of Channels |
1 |
| Rise Time |
27ns |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3620pF @ 25V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
32m Ω @ 500mA, 10V |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA6N50D2
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
UL RECOGNIZED |
| Power Dissipation (Max) |
300W Tc |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 3A, 0V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6A |
| Drain-source On Resistance-Max |
0.5Ohm |
| FET Feature |
Depletion Mode |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTA76N075T
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchMV™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
176W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Published |
2006 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2580pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
176W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
76A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
210A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXTA76N25T
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
460W Tc |
| Turn Off Delay Time |
56 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2007 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
30 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
25ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
460W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
76A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.039Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
170A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTA80N10T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchMV™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 25A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3040pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
54ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
48 ns |
| Continuous Drain Current (ID) |
80A |
| Drain-source On Resistance-Max |
0.014Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| JESD-30 Code |
R-PSSO-G6 |
| RoHS Status |
RoHS Compliant |
IXYS IXTA88N085T7
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
88A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3140pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 25A, 10V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G6 |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Rise Time |
54ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
88A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Drain to Source Breakdown Voltage |
85V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTA8N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
65 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
4 Weeks |
| Published |
2006 |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
8A |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
28ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1050pF @ 25V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXTA8N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
15 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
8A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTA90N055T
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchT2™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
176W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
176W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.8m Ω @ 25A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
90A |
| Drain-source On Resistance-Max |
0.0088Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |