Showing 2689–2700 of 7598 results
Transistors - FETs/MOSFETs - Single
IXYS IXTA90N055T2
In stock
Manufacturer |
IXYS |
---|---|
Published |
2012 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
150W Tc |
Turn Off Delay Time |
39 ns |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
28 Weeks |
Series |
TrenchT2™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Terminal Form |
GULL WING |
Packaging |
Tube |
Reach Compliance Code |
not_compliant |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2770pF @ 25V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
150W |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
8.4m Ω @ 25A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
4 |
Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
Rise Time |
21ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Continuous Drain Current (ID) |
90A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0084Ohm |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
230A |
Avalanche Energy Rating (Eas) |
300 mJ |
RoHS Status |
ROHS3 Compliant |
IXYS IXTA96P085T
In stock
Manufacturer |
IXYS |
---|---|
Published |
2010 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
298W Tc |
Turn Off Delay Time |
45 ns |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
28 Weeks |
Series |
TrenchP™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Terminal Form |
GULL WING |
Packaging |
Tube |
Reach Compliance Code |
not_compliant |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
298W |
Case Connection |
DRAIN |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
13m Ω @ 48A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
4 |
Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
Rise Time |
34ns |
Drain to Source Voltage (Vdss) |
85V |
Vgs (Max) |
±15V |
Fall Time (Typ) |
22 ns |
Continuous Drain Current (ID) |
96A |
Gate to Source Voltage (Vgs) |
15V |
Drain to Source Breakdown Voltage |
-85V |
Pulsed Drain Current-Max (IDM) |
300A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IXYS IXTA96P085T-TRL
In stock
Manufacturer |
IXYS |
---|---|
Factory Lead Time |
28 Weeks |
Mounting Type |
Surface Mount |
Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
298W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
TrenchP™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
13m Ω @ 48A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
13100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
Drain to Source Voltage (Vdss) |
85V |
Vgs (Max) |
±15V |
RoHS Status |
ROHS3 Compliant |
IXYS IXTC110N25T
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Package / Case |
ISOPLUS220™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
180W Tc |
Turn Off Delay Time |
60 ns |
Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
Operating Temperature |
-55°C~150°C TJ |
Published |
2012 |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
27MOhm |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vgs(th) (Max) @ Id |
4.5V @ 1mA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
180W |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
27m Ω @ 55A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
9400pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
157nC @ 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Rise Time |
27ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Continuous Drain Current (ID) |
50A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
250V |
Avalanche Energy Rating (Eas) |
1000 mJ |
RoHS Status |
RoHS Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
IXYS IXTC160N085T
In stock
Manufacturer |
IXYS |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS220™ |
Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
Packaging |
Tube |
Published |
2012 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
6mOhm |
FET Type |
N-Channel |
Drain to Source Voltage (Vdss) |
85V |
Continuous Drain Current (ID) |
110A |
RoHS Status |
RoHS Compliant |
IXYS IXTC180N10T
In stock
Manufacturer |
IXYS |
---|---|
Published |
2007 |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS220™ |
Number of Pins |
3 |
Supplier Device Package |
ISOPLUS220™ |
Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
Power Dissipation (Max) |
150W Tc |
Packaging |
Tube |
Mount |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Obsolete |
Element Configuration |
Single |
Power Dissipation |
150W |
FET Type |
N-Channel |
Drain to Source Voltage (Vdss) |
100V |
Continuous Drain Current (ID) |
90A |
Drain to Source Breakdown Voltage |
100V |
Drain to Source Resistance |
7mOhm |
RoHS Status |
RoHS Compliant |
IXYS IXTC220N055T
In stock
Manufacturer |
IXYS |
---|---|
Packaging |
Tube |
Package / Case |
ISOPLUS220™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
150W Tc |
Turn Off Delay Time |
53 ns |
Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
Operating Temperature |
-55°C~175°C TJ |
Published |
2006 |
Series |
TrenchMV™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
150W |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.4m Ω @ 25A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
7200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
158nC @ 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Rise Time |
62ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
53 ns |
Continuous Drain Current (ID) |
130A |
Drain-source On Resistance-Max |
0.0044Ohm |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
600A |
Avalanche Energy Rating (Eas) |
500 mJ |
Pin Count |
3 |
RoHS Status |
RoHS Compliant |
IXYS IXTC230N085T
In stock
Manufacturer |
IXYS |
---|---|
Part Status |
Obsolete |
Mounting Type |
Through Hole |
Package / Case |
ISOPLUS220™ |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
Packaging |
Tube |
Published |
2007 |
Mount |
Through Hole |
Max Power Dissipation |
160W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Power Dissipation |
160W |
FET Type |
N-Channel |
Continuous Drain Current (ID) |
120A |
Drain to Source Breakdown Voltage |
85V |
Drain to Source Resistance |
5.3mOhm |
RoHS Status |
RoHS Compliant |
IXYS IXTC36P15P
In stock
Manufacturer |
IXYS |
---|---|
Terminal Position |
SINGLE |
Package / Case |
ISOPLUS220™ |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
150W Tc |
Operating Temperature |
-55°C~175°C TJ |
Published |
2011 |
Series |
PolarP™ |
Packaging |
Tube |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2950pF @ 25V |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
ISOLATED |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
120m Ω @ 18A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
Drain to Source Voltage (Vdss) |
150V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
22A |
Drain-source On Resistance-Max |
0.12Ohm |
Pulsed Drain Current-Max (IDM) |
100A |
DS Breakdown Voltage-Min |
150V |
Avalanche Energy Rating (Eas) |
1500 mJ |
Pin Count |
3 |
RoHS Status |
RoHS Compliant |
IXYS IXTF03N400
In stock
Manufacturer |
IXYS |
---|---|
Published |
2009 |
Mounting Type |
Through Hole |
Package / Case |
i4-Pac™-5 (3 Leads) |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
300mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
70W Tc |
Turn Off Delay Time |
86 ns |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN SILVER COPPER |
Additional Feature |
UL RECOGNIZED |
Terminal Position |
SINGLE |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
435pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
16.3nC @ 10V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
70W |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
300 Ω @ 150mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Pin Count |
3 |
JESD-30 Code |
R-PSIP-T3 |
Rise Time |
16ns |
Drain to Source Voltage (Vdss) |
4000V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
58 ns |
Continuous Drain Current (ID) |
300mA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.3A |
Drain to Source Breakdown Voltage |
4kV |
Pulsed Drain Current-Max (IDM) |
0.8A |
RoHS Status |
RoHS Compliant |
IXYS IXTF230N085T
In stock
Manufacturer |
IXYS |
---|---|
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Package / Case |
i4-Pac™-5 |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
200W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Turn Off Delay Time |
56 ns |
Published |
2007 |
Series |
TrenchMV™ |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Rds On (Max) @ Id, Vgs |
5.3m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250mA |
Pin Count |
5 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
187nC @ 10V |
Rise Time |
49ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
39 ns |
Continuous Drain Current (ID) |
130A |
Drain-source On Resistance-Max |
0.0049Ohm |
Drain to Source Breakdown Voltage |
85V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
RoHS Compliant |