Showing 2701–2712 of 7598 results
IXYS IXTF250N075T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
i4-Pac™-5 |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
58 ns |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 50A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Pin Count |
5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
140A |
| Drain Current-Max (Abs) (ID) |
130A |
| Drain-source On Resistance-Max |
0.004Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
IXYS IXTF6N200P3
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
28 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUSi5-Pak™ |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
215W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Polar™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.2 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
143nC @ 10V |
| Drain to Source Voltage (Vdss) |
2000V |
| Vgs (Max) |
±20V |
IXYS IXTH06N220P3HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
104W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Factory Lead Time |
24 Weeks |
| Reach Compliance Code |
compliant |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
80 Ω @ 300mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
10.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
2200V |
| Vgs (Max) |
±20V |
IXYS IXTH102N20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
102A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750W Tc |
| Turn Off Delay Time |
50 ns |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| Series |
TrenchHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 500mA, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
26ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
102A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
1200 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH10P50
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
35 ns |
| Published |
2002 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| Resistance |
750mOhm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
-500V |
| Current Rating |
-10A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Rise Time |
27ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-500V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
300W |
| Lead Free |
Lead Free |
IXYS IXTH110N10L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Packaging |
Bulk |
| Operating Temperature (Max.) |
150°C |
| Published |
2010 |
| Series |
Linear L2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Position |
SINGLE |
| Additional Feature |
AVALANCHE RATED |
| Input Capacitance (Ciss) (Max) @ Vds |
10500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
110A |
| Drain-source On Resistance-Max |
0.018Ohm |
| DS Breakdown Voltage-Min |
100V |
| RoHS Status |
ROHS3 Compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
IXYS IXTH12N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
180W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Factory Lead Time |
15 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH130N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
44 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchMV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
104nC @ 10V |
| Rise Time |
47ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.1m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5080pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
130A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.0091Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
300A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTH130N20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2007 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
830W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Factory Lead Time |
30 Weeks |
| Series |
TrenchHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
130A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.016Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH13N110
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
13A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
80 ns |
| Published |
2000 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Resistance |
920mOhm |
| Voltage - Rated DC |
1.1kV |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
195nC @ 10V |
| Rise Time |
21ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
920m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5650pF @ 25V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
1100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
13A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1.1kV |
| Pulsed Drain Current-Max (IDM) |
52A |
| RoHS Status |
RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTH13N80
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
63 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Published |
1996 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
33ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
13A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
52A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH160N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
49 ns |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
8 Weeks |
| Published |
2006 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7MOhm |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
430W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
132nC @ 10V |
| Rise Time |
61ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
160A |
| JEDEC-95 Code |
TO-247AD |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
430A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |