Showing 2713–2724 of 7598 results
IXYS IXTH1N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
20 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
53 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
60W Tc |
| Qualification Status |
Not Qualified |
| Rise Time |
19ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
1.5A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
6A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH20N60
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
70 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Voltage - Rated DC |
600V |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Resistance |
350mOhm |
| Power Dissipation (Max) |
300W Tc |
| Current Rating |
20A |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
43ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
20A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH240N055T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
63 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
TrenchMV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
54ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
75 ns |
| Continuous Drain Current (ID) |
240A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.0036Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
650A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTH260N055T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
10800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
260A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
780A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH2N170D2
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
0V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
568W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Mount |
Through Hole |
| Power Dissipation |
568W |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5 Ω @ 1A, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
3650pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 5V |
| Drain to Source Voltage (Vdss) |
1700V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Feature |
Depletion Mode |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH300N04T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
300A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
10700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
300A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.0025Ohm |
| Pulsed Drain Current-Max (IDM) |
900A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH30N25
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2001 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
79 ns |
| Qualification Status |
Not Qualified |
| Rise Time |
19ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
136nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
30A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.075Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH30N50
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2002 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
110 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
227nC @ 10V |
| Rise Time |
42ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5680pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
30A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.17Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
120A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH30N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
460W Tc |
| Current Rating |
30A |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
PolarHV™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
75 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
27ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
460W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4150pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
30A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
75A |
| Avalanche Energy Rating (Eas) |
1200 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH30N60L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
540W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
123 ns |
| Published |
2001 |
| Series |
Linear L2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
10700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
335nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
540W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
2.5V |
| Drain-source On Resistance-Max |
0.24Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Nominal Vgs |
2.5 V |
| REACH SVHC |
No SVHC |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH32P20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2010 |
| Series |
TrenchP™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
300W Tc |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
14500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
32A |
| JEDEC-95 Code |
TO-247AD |
| Drain-source On Resistance-Max |
0.13Ohm |
| Pulsed Drain Current-Max (IDM) |
96A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH340N04T4
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchT4™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
340A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Factory Lead Time |
17 Weeks |
| Part Status |
Active |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
256nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
340A |
| RoHS Status |
ROHS3 Compliant |