Showing 2725–2736 of 7598 results
IXYS IXTH36P10
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
65 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
24 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
180W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Rise Time |
37ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
180W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
36A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.075Ohm |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
144A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH36P15P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
28 Weeks |
| Published |
2012 |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
36A |
| Drain-source On Resistance-Max |
0.11Ohm |
| Pulsed Drain Current-Max (IDM) |
90A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH3N120
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
32 ns |
| Packaging |
Tube |
| Published |
2003 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
1200V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
3A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
1.2kV |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH40N50L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
540W Tc |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Published |
2001 |
| Series |
Linear L2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
320nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
540W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10400pF @ 25V |
| Pin Count |
3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Threshold Voltage |
2.5V |
| Pulsed Drain Current-Max (IDM) |
80A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Nominal Vgs |
2.5 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH44P15T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
298W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
28 Weeks |
| Published |
2010 |
| Series |
TrenchP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
13400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
175nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
44A |
| Drain-source On Resistance-Max |
0.065Ohm |
| Pulsed Drain Current-Max (IDM) |
130A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH500N04T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1000W Tc |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Factory Lead Time |
28 Weeks |
| Published |
2009 |
| Series |
TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~175°C TJ |
| Additional Feature |
AVALANCHE RATED |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
25000pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1kW |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 100A, 10V |
| Terminal Position |
SINGLE |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
405nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
500A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH50N20
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Pin Count |
3 |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2000 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
45mOhm |
| Voltage - Rated DC |
200V |
| Current Rating |
50A |
| Turn Off Delay Time |
72 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
50A |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Dual Supply Voltage |
200V |
| Nominal Vgs |
4 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTH60N15
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
275W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2003 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
85 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
20ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
275W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
60A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH60N30T
In stock
| Manufacturer |
IXYS |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
300V |
| Continuous Drain Current (ID) |
60A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH64N65X
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2015 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
890W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
15 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
51m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
143nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
64A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTH67N10
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
67A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Voltage - Rated DC |
100V |
| Turn Off Delay Time |
100 ns |
| Packaging |
Tube |
| Published |
2003 |
| Series |
MegaMOS™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
25MOhm |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
| Pin Count |
3 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 33.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Rise Time |
60ns |
| Vgs (Max) |
±20V |
| Current Rating |
67A |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
67A |
| JEDEC-95 Code |
TO-247AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
268A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
IXYS IXTH6N50D2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
UL RECOGNIZED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Transistor Application |
AMPLIFIER |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 3A, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 25V |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
96nC @ 5V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
6A |
| Drain-source On Resistance-Max |
0.5Ohm |
| FET Feature |
Depletion Mode |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |