Showing 2749–2760 of 7598 results
IXYS IXTM5N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-204AA, TO-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
BOTTOM |
| Terminal Form |
PIN/PEG |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
180W Tc |
| Pin Count |
2 |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| JESD-30 Code |
O-MBFM-P2 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Pulsed Drain Current-Max (IDM) |
20A |
| DS Breakdown Voltage-Min |
1000V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTN102N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
595AW Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Factory Lead Time |
15 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 51A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
152nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
76A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTN110N20L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Chassis Mount, Screw |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
735W Tc |
| Terminal Position |
UPPER |
| Factory Lead Time |
28 Weeks |
| Published |
2009 |
| Series |
Linear L2™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
NICKEL |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
UNSPECIFIED |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 3mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
735W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
500nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
275A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTN320N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Power Dissipation (Max) |
680W Tc |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
320A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Mount |
Chassis Mount |
| Packaging |
Tube |
| Published |
2009 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Nickel (Ni) |
| Operating Temperature (Max.) |
175°C |
| Terminal Position |
UPPER |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
320A |
| Drain-source On Resistance-Max |
0.0032Ohm |
| Pulsed Drain Current-Max (IDM) |
700A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
2300 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXTN32P60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
890W Tc |
| Turn Off Delay Time |
95 ns |
| Terminal Form |
UNSPECIFIED |
| Factory Lead Time |
28 Weeks |
| Published |
2008 |
| Series |
PolarP™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Nickel (Ni) |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Terminal Position |
UPPER |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
11100pF @ 25V |
| JESD-30 Code |
R-PUFM-X4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
890W |
| Case Connection |
ISOLATED |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
196nC @ 10V |
| Rise Time |
27ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
32A |
| Drain-source On Resistance-Max |
0.35Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Avalanche Energy Rating (Eas) |
3500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTN62N50L
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
4 |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
62A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
800W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
110 ns |
| Published |
2007 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
NICKEL |
| Additional Feature |
UL RECOGNIZED |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Mount |
Chassis Mount, Panel, Screw |
| Factory Lead Time |
24 Weeks |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
75 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
36 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 500mA, 20V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
550nC @ 20V |
| Rise Time |
85ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
62A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
5000 mJ |
| Height |
9.6mm |
| Length |
38.23mm |
| Width |
25.42mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
800W |
| Lead Free |
Lead Free |
IXYS IXTN660N04T4
In stock
| Manufacturer |
IXYS |
|---|---|
| Pbfree Code |
yes |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Current - Continuous Drain (Id) @ 25℃ |
660A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1040W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
TrenchT4™ |
| Factory Lead Time |
28 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.85m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
44000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
860nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
660A |
| FET Feature |
Current Sensing |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTN90N25L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
735W Tc |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Factory Lead Time |
28 Weeks |
| Published |
2009 |
| Series |
Linear L2™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
33MOhm |
| Terminal Finish |
Nickel (Ni) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
UPPER |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 3mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
735W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
640nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP01N100D
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100mA Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta 25W Tc |
| Terminal Finish |
PURE TIN |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tube |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Rise Time |
6ns |
| Current Rating |
4A |
| Element Configuration |
Single |
| Power Dissipation |
1.1W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110 Ω @ 50mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 25V |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Voltage - Rated DC |
1kV |
| Continuous Drain Current (ID) |
100mA |
| JEDEC-95 Code |
TO-220AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1kV |
| FET Feature |
Depletion Mode |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXTP02N120P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
33W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
24 Weeks |
| Published |
2012 |
| Series |
Polar™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
104pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
4.7nC @ 10V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200mA |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain-source On Resistance-Max |
0.075Ohm |
| Pulsed Drain Current-Max (IDM) |
0.6A |
| DS Breakdown Voltage-Min |
1200V |
| Avalanche Energy Rating (Eas) |
40 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP02N50D
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta 25W Tc |
| HTS Code |
8541.29.00.95 |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
28 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
25W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
30 Ω @ 50mA, 0V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200mA |
| JEDEC-95 Code |
TO-220AD |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
0.8A |
| FET Feature |
Depletion Mode |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP08N50D2
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
800mA Tc |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Power Dissipation (Max) |
60W Tc |
| Packaging |
Tube |
| Published |
2009 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
312pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Rds On (Max) @ Id, Vgs |
4.6 Ω @ 400mA, 0V |
| Gate Charge (Qg) (Max) @ Vgs |
12.7nC @ 5V |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
800mA |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| FET Feature |
Depletion Mode |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |