Showing 2761–2772 of 7598 results
IXYS IXTP10N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
Polar™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Pure Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
10A |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
740m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1610pF @ 25V |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Pin Count |
3 |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.74Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTP10P15T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Reach Compliance Code |
unknown |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
TrenchP™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2210pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Pin Count |
3 |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.35Ohm |
| Pulsed Drain Current-Max (IDM) |
30A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP110N12T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
517W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6570pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Drain to Source Voltage (Vdss) |
120V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP12N50PM
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
12A |
| Packaging |
Tube |
| Series |
Polar™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1830pF @ 25V |
| Rise Time |
27ns |
| Vgs (Max) |
±30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTP140N12T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
577W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
174nC @ 10V |
| Drain to Source Voltage (Vdss) |
120V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP150N15X4
In stock
| Manufacturer |
IXYS |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
480W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Factory Lead Time |
15 Weeks |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
7.2m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP15N50L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
24 Weeks |
| Published |
2009 |
| Series |
Linear L2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
4080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
123nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
480m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| Threshold Voltage |
2.5V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.48Ohm |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Nominal Vgs |
2.5 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP160N04T2
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
TrenchT2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4640pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
79nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
160A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.005Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP160N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
49 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
61ns |
| Element Configuration |
Single |
| Power Dissipation |
430W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
132nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
42 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
160A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
430A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP16N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
70 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
24 Weeks |
| Published |
2004 |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
16A |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
28ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
16A |
| Threshold Voltage |
5.5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.4Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP180N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
42 ns |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
151nC @ 10V |
| Rise Time |
54ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
180A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0064Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTP18N60PM
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Polar™ |
| JESD-609 Code |
e3 |
| Published |
2010 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
9A |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.42Ohm |
| Pulsed Drain Current-Max (IDM) |
54A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |