Showing 2773–2784 of 7598 results
IXYS IXTP1N80
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
750mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Packaging |
Bulk |
| Published |
2003 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
40 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
8.5nC @ 10V |
| Rise Time |
19ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
220pF @ 25V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
750mA |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.75A |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
3A |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP1R4N120P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
86W Tc |
| Turn Off Delay Time |
78 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| Series |
Polar™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Rise Time |
27ns |
| Element Configuration |
Single |
| Power Dissipation |
86W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
666pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
24.8nC @ 10V |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±20V |
| JESD-30 Code |
R-PSFM-T3 |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
1.4A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
1.2kV |
| Pulsed Drain Current-Max (IDM) |
3A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP1R4N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
1.4A |
| Packaging |
Tube |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
2 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9 Ω @ 700mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 25μA |
| Gate Charge (Qg) (Max) @ Vgs |
5.2nC @ 10V |
| Rise Time |
16ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
1.4A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
9Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
75 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
IXYS IXTP1R6N50D2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
35 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2009 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
UL RECOGNIZED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
23.7nC @ 5V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Rds On (Max) @ Id, Vgs |
2.3 Ω @ 800mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds |
645pF @ 25V |
| Rise Time |
70ns |
| Vgs (Max) |
±20V |
| Pin Count |
3 |
| Fall Time (Typ) |
41 ns |
| Continuous Drain Current (ID) |
1.6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
500V |
| FET Feature |
Depletion Mode |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTP20N65X
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2015 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
320W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
15 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
210m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1390pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
20A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP220N055T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
220A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
430W Tc |
| Turn Off Delay Time |
53 ns |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
7200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
158nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
430W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
62ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
53 ns |
| Continuous Drain Current (ID) |
220A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.004Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
600A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTP220N075T
In stock
| Manufacturer |
IXYS |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
220A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
TrenchMV™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
165nC @ 10V |
| Rise Time |
65ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7700pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
47 ns |
| Continuous Drain Current (ID) |
220A |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
130A |
| Drain-source On Resistance-Max |
0.0085Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
350A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXTP230N04T4
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
230A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
340W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchT4™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.9m Ω @ 115A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±15V |
IXYS IXTP24P085T
In stock
| Manufacturer |
IXYS |
|---|---|
| Series |
TrenchP™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Published |
2010 |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
2090pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
85V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
24A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.065Ohm |
| Pulsed Drain Current-Max (IDM) |
80A |
| DS Breakdown Voltage-Min |
85V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP26P20P
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
46 ns |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
PolarP™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
170MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Rise Time |
33ns |
| Drain to Source Voltage (Vdss) |
200V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
170m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2740pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
26A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-200V |
| Pulsed Drain Current-Max (IDM) |
70A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
IXYS IXTP32N65X
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2015 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
500W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
15 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
135m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2205pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
32A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP32N65XM
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2015 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
78W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Factory Lead Time |
15 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
135m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2206pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
14A |
| RoHS Status |
ROHS3 Compliant |