Showing 2785–2796 of 7598 results
IXYS IXTP32P05T
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
TrenchP™ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1975pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Drain to Source Voltage (Vdss) |
50V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
32A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.039Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
50V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXTP32P20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
17 Weeks |
| Published |
2010 |
| Series |
TrenchP™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Drain to Source Voltage (Vdss) |
200V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14500pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
32A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.13Ohm |
| Pulsed Drain Current-Max (IDM) |
96A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP36P15P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
36 ns |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
24 Weeks |
| Published |
2009 |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Rise Time |
31ns |
| Drain to Source Voltage (Vdss) |
150V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
36A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-150V |
| Pulsed Drain Current-Max (IDM) |
90A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP3N110
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-30 Code |
R-PSFM-T3 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
1100V |
| Vgs (Max) |
±20V |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
15ns |
| Element Configuration |
Single |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
3A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain-source On Resistance-Max |
4Ohm |
| Drain to Source Breakdown Voltage |
1.1kV |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP3N120
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
32 ns |
| Voltage - Rated DC |
1.2kV |
| Factory Lead Time |
24 Weeks |
| Published |
2004 |
| Series |
HiPerFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
4.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
3A |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
15ns |
| Pin Count |
3 |
| Element Configuration |
Single |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
3A |
| Threshold Voltage |
5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
1.1kV |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTP450P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Published |
2011 |
| Series |
PolarP2™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Vgs (Max) |
±30V |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2530pF @ 25V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
16A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP460P2
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Series |
PolarP2™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Drain to Source Voltage (Vdss) |
500V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
24A |
| Pin Count |
3 |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.27Ohm |
| Pulsed Drain Current-Max (IDM) |
50A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP4N65X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Factory Lead Time |
15 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
850m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
455pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
4A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP56N15T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
56A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
TrenchHV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 28A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 25V |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
56A |
| JEDEC-95 Code |
TO-220AB |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Reach Compliance Code |
unknown |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP75N10P
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Turn Off Delay Time |
66 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
25MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
74nC @ 10V |
| Rise Time |
53ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
5.5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Height |
9.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP76P10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
76A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
298W Tc |
| Turn Off Delay Time |
52 ns |
| Packaging |
Tube |
| Published |
2010 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchP™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±15V |
| Power Dissipation |
298W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
197nC @ 10V |
| Rise Time |
40ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSFM-T3 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
76A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.024Ohm |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
230A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
IXYS IXTP80N075L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
357W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
Linear L2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
ROHS3 Compliant |