Showing 2797–2808 of 7598 results
IXYS IXTP88N085T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
88A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
230W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
230W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
54ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
88A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.011Ohm |
| Drain to Source Breakdown Voltage |
85V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTP8N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
8A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
65 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Rise Time |
28ns |
| Vgs (Max) |
±30V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
8A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
14A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| RoHS Status |
RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
IXYS IXTP8N65X2M
In stock
| Manufacturer |
IXYS |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
32W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Active |
| Factory Lead Time |
15 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
4A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTP8N70X2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
15 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2017 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTQ100N25P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Turn Off Delay Time |
100 ns |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
24 Weeks |
| Published |
2006 |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
27MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
185nC @ 10V |
| Rise Time |
26ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
600W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6300pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTQ110N10P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
65 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3550pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 500mA, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
110A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.015Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTQ130N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
44 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
8 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
360W Tc |
| Terminal Finish |
Matte Tin (Sn) |
| Rds On (Max) @ Id, Vgs |
9.1m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
5080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
104nC @ 10V |
| Rise Time |
47ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
130A |
| Drain-source On Resistance-Max |
0.0091Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTQ14N60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
70 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
24 Weeks |
| Published |
2006 |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
14A |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
27ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Polarity/Channel Type |
P-CHANNEL |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.55Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
42A |
| Avalanche Energy Rating (Eas) |
900 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTQ150N06P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
480W Tc |
| Turn Off Delay Time |
66 ns |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Published |
2006 |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
118nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
480W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
53ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
150A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.01Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
280A |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTQ150N15P
In stock
| Manufacturer |
IXYS |
|---|---|
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
714W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
100 ns |
| Published |
2006 |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
5800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
714W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
33ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
150A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
150V |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| REACH SVHC |
No SVHC |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTQ160N085T
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
360W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
65 ns |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
6400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
164nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
360W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
61ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Drain to Source Breakdown Voltage |
85V |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
IXYS IXTQ16N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
70 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
2250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current Rating |
16A |
| Rise Time |
28ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.4Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |