Showing 2821–2832 of 7598 results
IXYS IXTQ96N20P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
PolarHT™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
75 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
600W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
96A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.024Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
225A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTQ96N25T
In stock
| Manufacturer |
IXYS |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
96A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625W Tc |
| Turn Off Delay Time |
59 ns |
| Packaging |
Tube |
| Published |
2007 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
TrenchHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
6100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
114nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
29m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Rise Time |
22ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
96A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.029Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
250A |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTR20P50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
28 Weeks |
| Published |
2008 |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
490m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
5120pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
13A |
| Drain-source On Resistance-Max |
0.49Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTR30N25
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
10 Weeks |
| Packaging |
Tube |
| Published |
2001 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Turn Off Delay Time |
79 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
136nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Rise Time |
19ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.075Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTR40P50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Power Dissipation (Max) |
312W Tc |
| Terminal Position |
SINGLE |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Input Capacitance (Ciss) (Max) @ Vds |
11500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
205nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
22A |
| Drain-source On Resistance-Max |
0.26Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
500V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTR90P10P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2012 |
| Mounting Type |
Through Hole |
| Package / Case |
ISOPLUS247™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 45A, 10V |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5800pF @ 25V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
57A |
| Drain-source On Resistance-Max |
0.027Ohm |
| Pulsed Drain Current-Max (IDM) |
225A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
2500 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTT10N100D
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
85ns |
| Pin Count |
4 |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
75 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
20A |
| FET Feature |
Depletion Mode |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTT12N150
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
890W Tc |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
3720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
890W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
1500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| Drain-source On Resistance-Max |
2Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTT1N250HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
250W Tc |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1660pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Reach Compliance Code |
not_compliant |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
2500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.5A |
| Pulsed Drain Current-Max (IDM) |
6A |
| DS Breakdown Voltage-Min |
2500V |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
IXYS IXTT1N450HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Terminal Finish |
Matte Tin (Sn) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Published |
2013 |
| Element Configuration |
Single |
| Packaging |
Tube |
| Turn Off Delay Time |
58 ns |
| Power Dissipation (Max) |
520W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
1A Tc |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
24 Weeks |
| Power Dissipation |
520W |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
| Drain to Source Breakdown Voltage |
4.5kV |
| Drain Current-Max (Abs) (ID) |
1A |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
1A |
| Fall Time (Typ) |
127 ns |
| Drain to Source Voltage (Vdss) |
4500V |
| Operating Mode |
ENHANCEMENT MODE |
| Rise Time |
60ns |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1730pF @ 25V |
| Vgs(th) (Max) @ Id |
6.5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
85 Ω @ 50mA, 10V |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
IXYS IXTT24P20
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2005 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
68 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
24 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
110MOhm |
| Terminal Finish |
PURE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Packaging |
Tube |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
29ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-200V |
| Pulsed Drain Current-Max (IDM) |
96A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTT26N50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
400W Tc |
| Turn Off Delay Time |
58 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
24 Weeks |
| Series |
PolarHV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
26A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.23Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
78A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |