Showing 2845–2856 of 7598 results
IXYS IXTV230N085T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3, Short Tab |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
550W Tc |
| Turn Off Delay Time |
56 ns |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2006 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
550W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
9900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
187nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
49ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
39 ns |
| Continuous Drain Current (ID) |
230A |
| Drain-source On Resistance-Max |
0.0044Ohm |
| Drain to Source Breakdown Voltage |
85V |
| Pulsed Drain Current-Max (IDM) |
520A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
IXYS IXTV26N50PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Current Rating |
26A |
| Package / Case |
PLUS-220SMD |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
460W Tc |
| Turn Off Delay Time |
58 ns |
| Packaging |
Tube |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PolarHV™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
400W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 250μA |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
26A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
78A |
| Avalanche Energy Rating (Eas) |
1000 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
IXYS IXTV280N055TS
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
PLUS-220SMD |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
280A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
550W Tc |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2006 |
| Series |
TrenchMV™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
49 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
550W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
9800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
200nC @ 10V |
| Rise Time |
55ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
280A |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
600A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTV30N60PS
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Package / Case |
PLUS-220SMD |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
540W Tc |
| Turn Off Delay Time |
80 ns |
| Current Rating |
30A |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
PolarHV™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
5050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
540W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.24Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXTX1R4N450HV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
960W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40 Ω @ 50mA, 10V |
| Vgs(th) (Max) @ Id |
6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
88nC @ 10V |
| Drain to Source Voltage (Vdss) |
4500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.4A |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTX22N100L
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2007 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
600MOhm |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED, UL RECOGNIZED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
35ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
36 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 11A, 20V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
270nC @ 15V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
50A |
| Avalanche Energy Rating (Eas) |
1500 mJ |
| Height |
21.34mm |
| Length |
16.13mm |
| Width |
5.21mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTX240N075L2
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
28 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
960W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Linear L2™ |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 120A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
19000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
546nC @ 10V |
| Drain to Source Voltage (Vdss) |
75V |
| Vgs (Max) |
±20V |
IXYS IXTX24N100
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
568W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tube |
| Published |
2010 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
75 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
267nC @ 10V |
| Rise Time |
35ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
560W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
5.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
8700pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.4Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
96A |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXTX32P60P
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Finish |
TIN SILVER COPPER |
| Factory Lead Time |
28 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
890W Tc |
| Additional Feature |
AVALANCHE RATED |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 16A, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
11100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
196nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
32A |
| Pulsed Drain Current-Max (IDM) |
96A |
| DS Breakdown Voltage-Min |
600V |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTX40P50P
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2012 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
890W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tube |
| Series |
PolarP™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN SILVER COPPER |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
28 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 20A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
11500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
205nC @ 10V |
| Reach Compliance Code |
unknown |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Drain-source On Resistance-Max |
0.23Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
3500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
IXYS IXTX46N50L
In stock
| Manufacturer |
IXYS |
|---|---|
| Turn Off Delay Time |
80 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Number of Elements |
1 |
| Resistance |
160mOhm |
| Factory Lead Time |
24 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
700W Tc |
| Terminal Finish |
TIN SILVER COPPER |
| Input Capacitance (Ciss) (Max) @ Vds |
7000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
260nC @ 15V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 500mA, 20V |
| Vgs(th) (Max) @ Id |
6V @ 250μA |
| Additional Feature |
AVALANCHE RATED |
| Pin Count |
3 |
| Rise Time |
50ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
46A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTY1R4N120PHV
In stock
| Manufacturer |
IXYS |
|---|---|
| Factory Lead Time |
24 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
86W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
Polar™ |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13 Ω @ 700mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
666pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
24.8nC @ 10V |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±30V |