Showing 2857–2868 of 7598 results
IXYS IXTY32P05T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
83W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
24 Weeks |
| Published |
2012 |
| Series |
TrenchP™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1975pF @ 25V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
39m Ω @ 16A, 10V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
| Drain to Source Voltage (Vdss) |
50V |
| Vgs (Max) |
±15V |
| Continuous Drain Current (ID) |
32A |
| Drain-source On Resistance-Max |
0.039Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
50V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
IXYS IXTY44N10T
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tube |
| Published |
2006 |
| Series |
TrenchMV™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Turn Off Delay Time |
36 ns |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Rise Time |
47ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
130W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1262pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
44A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS IXTY50N085T
In stock
| Manufacturer |
IXYS |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Turn Off Delay Time |
38 ns |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Published |
2006 |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 25μA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
130W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
1460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
32ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
33 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-252AA |
| Drain to Source Breakdown Voltage |
85V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| RoHS Status |
RoHS Compliant |
IXYS IXTY64N055T
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
64A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Series |
TrenchMV™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1420pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
130W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Rise Time |
52ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
64A |
| JEDEC-95 Code |
TO-252AA |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
IXYS IXUC100N055
In stock
| Manufacturer |
IXYS |
|---|---|
| JESD-30 Code |
R-PSIP-T3 |
| Package / Case |
ISOPLUS220™ |
| Number of Pins |
220 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
230 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
35 |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Reverse Recovery Time |
80 ns |
| Continuous Drain Current (ID) |
100A |
| Power Dissipation |
150W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
115ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
155 ns |
| Element Configuration |
Single |
| Qualification Status |
Not Qualified |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-273AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0077Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Isolation Voltage |
2.5kV |
| Nominal Vgs |
4 V |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
RoHS Compliant |
IXYS MKE38RK600DFELB
In stock
| Manufacturer |
IXYS |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Package / Case |
SMD/SMT |
| Number of Elements |
1 |
| Number of Terminations |
9 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
9 |
| JESD-30 Code |
R-PDSO-G9 |
| Mount |
Surface Mount |
| Case Connection |
ISOLATED |
| Operating Mode |
ENHANCEMENT MODE |
| Transistor Application |
SWITCHING |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
50A |
| Drain-source On Resistance-Max |
0.045Ohm |
| Avalanche Energy Rating (Eas) |
1950 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Rds On Max |
45 mΩ |
| Capacitance - Input |
6.8nF |
| RoHS Status |
RoHS Compliant |
IXYS MMIX1F160N30T
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
24-PowerSMD, 21 Leads |
| Number of Pins |
21 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
102A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
570W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| Series |
GigaMOS™, HiPerFET™, TrenchT2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
21 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
90 ns |
| Pin Count |
21 |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Power Dissipation |
570W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
34 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
335nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
102A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.02Ohm |
| Pulsed Drain Current-Max (IDM) |
440A |
| DS Breakdown Voltage-Min |
300V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| Height |
5.7mm |
| Length |
25.25mm |
| Width |
23.25mm |
| RoHS Status |
ROHS3 Compliant |
IXYS MMIX1F230N20T
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
24-PowerSMD, 21 Leads |
| Number of Pins |
24 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
168A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
600W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
30 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| Series |
GigaMOS™, HiPerFET™, TrenchT2™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
21 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
62 ns |
| Pin Count |
21 |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
58 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.3m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds |
28000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
378nC @ 10V |
| JESD-30 Code |
R-PDSO-G21 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
168A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.0083Ohm |
| Pulsed Drain Current-Max (IDM) |
630A |
| DS Breakdown Voltage-Min |
200V |
| Avalanche Energy Rating (Eas) |
3000 mJ |
| Height |
5.7mm |
| Length |
25.25mm |
| Width |
23.25mm |
| RoHS Status |
ROHS3 Compliant |
IXYS VMO580-02F
In stock
| Manufacturer |
IXYS |
|---|---|
| Published |
2002 |
| Mounting Type |
Chassis Mount |
| Package / Case |
Y3-Li |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
580A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
900 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Position |
UPPER |
| Mount |
Chassis Mount |
| Series |
HiPerFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
11 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
200V |
| Packaging |
Bulk |
| Terminal Form |
UNSPECIFIED |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 430A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
VMO |
| JESD-30 Code |
R-XUFM-X11 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
580A |
| Gate Charge (Qg) (Max) @ Vgs |
2750nC @ 10V |
| Rise Time |
500ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
500 ns |
| Continuous Drain Current (ID) |
580A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0038Ohm |
| Drain to Source Breakdown Voltage |
200V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
IXYS VMO650-01F
In stock
| Manufacturer |
IXYS |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Chassis Mount |
| Mounting Type |
Chassis Mount |
| Package / Case |
Y3-DCB |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
690A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2500W Tc |
| Terminal Form |
UNSPECIFIED |
| Factory Lead Time |
28 Weeks |
| Packaging |
Bulk |
| Published |
2000 |
| Series |
HiPerFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
100V |
| Terminal Position |
UPPER |
| Turn Off Delay Time |
800 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
6V @ 130mA |
| Input Capacitance (Ciss) (Max) @ Vds |
59000pF @ 25V |
| Base Part Number |
VMO |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5kW |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 500mA, 10V |
| Current Rating |
690A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
2300nC @ 10V |
| Rise Time |
500ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
200 ns |
| Continuous Drain Current (ID) |
690A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0018Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
2780A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Linearin SD210DE-TO-72-4L-BK
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
TO-72-4 |
| Mounting Style |
Through Hole |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
50 mA |
| Maximum Operating Temperature |
+ 125 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
300 mW |
| Rds On - Drain-Source Resistance |
45 Ohms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
30 V |
| Vgs - Gate-Source Voltage |
– 40 V, + 40 V |
| Vgs th - Gate-Source Threshold Voltage |
1.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Linearin SD214DE-TO-72-4L-BK
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
TO-72-4 |
| Mounting Style |
Through Hole |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
50 mA |
| Maximum Operating Temperature |
+ 125 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
300 mW |
| Rds On - Drain-Source Resistance |
45 Ohms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
20 V |
| Vgs - Gate-Source Voltage |
– 40 V, + 40 V |
| Vgs th - Gate-Source Threshold Voltage |
1.5 V |
| Series |
SD/SST210 |
| Technology |
Si |
| Number of Channels |
1 Channel |