Showing 2869–2880 of 7598 results
Transistors - FETs/MOSFETs - Single
Littelfuse Inc. LSIC1MO120E0160
In stock
Manufacturer |
Littelfuse Inc. |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Power Dissipation (Max) |
125W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Active |
Factory Lead Time |
25 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
ECCN Code |
EAR99 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
200m Ω @ 10A, 20V |
Vgs(th) (Max) @ Id |
4V @ 5mA |
Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs |
57nC @ 20V |
Drain to Source Voltage (Vdss) |
1200V |
Vgs (Max) |
+22V, -6V |
RoHS Status |
ROHS3 Compliant |
Littelfuse IXFA50N20X3
In stock
Manufacturer |
Littelfuse |
---|---|
Package / Case |
TO-263-3 |
Mounting Style |
SMD/SMT |
Channel Mode |
Enhancement |
Id - Continuous Drain Current |
50 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
240 W |
Qg - Gate Charge |
33 nC |
Rds On - Drain-Source Resistance |
30 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
200 V |
Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
2.5 V |
Series |
HiPerFET |
Technology |
Si |
Number of Channels |
1 Channel |
Littelfuse IXFH46N65X3
In stock
Manufacturer |
Littelfuse |
---|---|
Qg - Gate Charge |
40 nC |
Channel Mode |
Enhancement |
Continuous Drain Current Id |
46A |
Id - Continuous Drain Current |
46 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
520 W |
Mounting Style |
Through Hole |
Transistor Polarity |
N-Channel |
Rds On - Drain-Source Resistance |
73 mOhms |
Vds - Drain-Source Breakdown Voltage |
650 V |
Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
5.2 V |
Technology |
Si |
Number of Channels |
1 Channel |
Power Dissipation |
520W |
Channel Type |
N Channel |
Littelfuse IXFH98N60X3
In stock
Manufacturer |
Littelfuse |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
Through Hole |
Channel Mode |
Enhancement |
Id - Continuous Drain Current |
98 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
960 W |
Qg - Gate Charge |
90 nC |
Rds On - Drain-Source Resistance |
30 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
600 V |
Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
5 V |
Technology |
Si |
Number of Channels |
1 Channel |
Littelfuse IXFK100N10
In stock
Manufacturer |
Littelfuse |
---|---|
Package / Case |
TO-264-3 |
Mounting Style |
Through Hole |
Channel Mode |
Enhancement |
Id - Continuous Drain Current |
100 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
500 W |
Rds On - Drain-Source Resistance |
12 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
100 V |
Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
Series |
HiPerFET |
Technology |
Si |
Number of Channels |
1 Channel |